JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC350
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM
: 0.3 W
Tamb=25
Collector current
I
CM
: -0.1 A
Collector-base voltage
V
(BR)CBO
: -50 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= -100
A
I
E
=0
-50
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -1mA, IB=0
-45
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= -100
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-50V, I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
=-35V, I
B
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= -3V, I
C
=0
-0.1
A
DC current gain
h
FE
V
CE
=-5 V, I
C
= -2mA
40
450
Collector-emitter saturation voltage
V
CEsat
I
C
= -10mA, I
B
= -1mA
-0.3
V
Base-emitter saturation voltage
V
BEsat
I
C
= -10mA, I
B
= -1mA
-1
V
Transition frequency
f
T
V
CE
=-5V,I
C
=-10mA,
f=30MHz
125
MHz
1
2
3
TO
--
92
1.EMITTER
2. BASE
3. COLLECTOR
D
b
E
A
A
1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters
Dimensions In Inches
0.050TYP
1.270TYP
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