JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
D965
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 0.75 W
Tamb=25
Collector current
I
CM
: 5 A
Collector-base voltage
V
(BR)CBO
: 42 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic=1
A
I
E
=0
42
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 1 mA
I
B
=0
22
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 10
A
I
C
=0
6
V
Collector cut-off current
I
CBO
V
CB
= 30 V , I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 6 V
I
C
=0
0.1
A
H
FE
1
V
CE
= 2 V, I
C
= 0.15
mA
150
H
FE
2
V
CE
= 2V, I
C
= 500 mA
340
950
DC current gain
H
FE
3
V
CE
= 2V, I
C
= 2000
mA
150
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=3000mA,I
B
=100 mA
0.35
V
CLASSIFICATION OF H
FE(2)
Rank
R
T
Range
340-600
560-950
1
2
3
TO
--
92
1.EMITTER
2. COLLECTOR
3. BASE
D
b
E
A
A
1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters
Dimensions In Inches
0.050TYP
1.270TYP
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