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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Diode
DAN222E
SWITCHING DIODE
DESCRIPTION
Epitaxial planar Silicon diode
FEATURES
:
High speed. (trr=1.5ns Typ.)
Suitable for high packing density layout
High reliability.
APPLICATION
Ultra high speed switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: N
-
N
+ +
Maximum Ratings and Electrical Characteristics, Single Diode
@T
A
=25
Parameter Symbol
Limits
Unit
Peak reverse voltage
V
RM
80
V
DC reverse voltage
V
R
80
V
Maximum (peak) forward current
I
FM
300
mA
Average forward current
I
O
100
mA
Power dissipation
P
D
150
mW
Junction temperature
T
j
150
Storage temperature
T
stg
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V
(BR)
I
R
= 100
A
80 V
Reverse voltage leakage current
I
R
V
R
=70V
0.1
A
Forward voltage
V
F
I
F
=100mA
1.2
V
Diode capacitance
C
D
V
R
=6V, f=1MHz
3.5
pF
Reverse recovery time
t
rr
V
R
=6V, I
F
=5mA 4
ns
WBFBP-03A
(1.61.60.5)
unit: mm
1. ANODE
2. ANODE
3.CATHODE
M in .
M a x .
M in .
M a x .
A
0 .4 5 0
0 .5 5 0
0 .0 1 8
0 .0 2 2
A 1
0 .0 1 0
0 .0 9 0
0 .0 0 0
0 .0 0 4
b
0 .2 3 0
0 .3 3 0
0 .0 0 9
0 .0 1 3
b 1
D
1 .5 5 0
1 .6 5 0
0 .0 6 1
0 .0 6 5
E
1 .5 5 0
1 .6 5 0
0 .0 6 1
0 .0 6 5
D 2
E 2
e
L
L 1
L 2
L 3
L 4
k
z
0 .3 2 0 R E F .
0 .0 1 3 R E F .
0 .1 6 0 R E F .
0 .0 0 6 R E F .
S y m b o l
D im e n s io n s In M illim e t e r s
D im e n s io n s In In c h e s
1 .0 0 0 T Y P .
0 .0 4 0 T Y P .
0 .7 5 0 R E F .
1 .0 0 0 R E F .
0 .0 3 0 R E F .
0 .0 4 0 R E F .
0 .3 2 0 R E F .
0 .0 1 3 R E F .
0 .2 3 0 R E F .
0 .1 8 0 R E F .
0 .2 8 0 R E F .
0 .0 1 1 R E F .
0 .2 5 0 R E F .
0 .2 0 0 R E F .
0 .0 0 9 R E F .
0 .0 0 7 R E F .
0 .0 1 0 R E F .
0 .0 0 8 R E F .
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