ChipFind - документация

Электронный компонент: DTA114TKA

Скачать:  PDF   ZIP
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

Digital transistors (built-in resistors)
DTA114TE/ DTA114TUA
/DTA114TCA/ DTA114TKA/ DTA114TSA
TRANSISTOR (PNP)

FEATURES
Built-in bias resistors enable the configuration of an
inverter circuit without connecting extemal input resistors.
The bias resistors conisit of thin-film resistors with
complete isolation to without connecting extemal input.
They also have the advantage of almost completely
Eliminating parasitic effects.
Only the on/off conditions need to be set for operation,
marking device design easy.
PIN CONNENCTIONS AND MARKING
(1) Emitter
(2) Collector
(3) Base
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
Addreviated symbol: 94
SOT-523
Addreviated symbol: 94
SOT-23-3L
SOT-23
SOT-323
TO-92S
DTA114TE
DTA114TUA
DTA114ECA
DTA114TCA
DTA114TKA
DTA114TSA
Addreviated symbol: 94
Addreviated symbol: 94
MAXIMUM RATINGS* T
A
=25 unless otherwise noted
LIMITS(DTA114T
)
Symbol Parameter
E UA KA CA SA
Units
V
CBO
Collector-Base Voltage
-50 V
V
CEO
Collector-Emitter Voltage
-50 V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current -Continuous
-100
mA
P
C
Collector Dissipation
150
200
300
mW
T
J
, T
stg
Junction and Storage Temperature
-55~+150


ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=-
50
A,I
E
=0
-50 V
Collector-emitter breakdown
voltage
V
(BR)CEO
Ic=-
1
mA,I
B
=0
-50 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-
50
A,I
C
=0
-5 V
Collector cut-off current
I
CBO
V
CB
=-
50
V,I
E
=0
-0.5
uA
Emitter cut-off current
I
EBO
V
EB
=-
4
V,I
C
=0
-0.5
uA
DC current gain
h
FE
V
CE
=-
5
V,I
C
=-
1
mA
100 250 600
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-
10mA,I
B
=-
1mA
-0.3
V
Transition frequency
f
T
V
CE
=-
10
V,I
C
=-
5
mA, f=
100
MHz
250 MHz
Imput resistor
R1
7
10
13
k
Typical Characteristics