JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTA143TE/DTA143TUA/DTA143TKA
/DTA143TSA/ DTA143TCA
DIGITAL TRANSISTOR (PNP)
FEATURES
1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors(see equivalent circuit).
2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input.They also have the advantage of almost completely eliminating parasitic effects.
3. Only the on/off conditions need to be set for operation, making device design easy.
PIN CONNENCTIONS AND MARKING
(1) Emitter
(2) Collector
(3) Base
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
Addreviated symbol: 93
SOT-523
Addreviated symbol: 93
SOT-23-3L
SOT-23
SOT-323
TO-92S
DTA143TE
DTA143TUA
DTA114ECA
DTA143TCA
DTA143TKA
DTA143TSA
Addreviated symbol: 93
Addreviated symbol: 93
Absolute maximum ratings(Ta=25
)
Limits (DTA143T
)
Parameter Symbol
E UA CA KA SA
Unit
Collector-base voltage
V
(BR)CBO
-50
V
Collector-emitter voltage
V
(BR)CEO
-50
V
Emitter-base voltage
V
(BR)EBO
-5
V
Collector current
I
C
-100 mA
Collector Power dissipation
P
C
150 200 300
mW
Junction temperature
Tj 150
Storage temperature
Tstg -55~150
Electrical characteristics (Ta=25
)
Typical Characteristics
Parameter Symbol
Min.
Typ
Max.
Unit
Conditions
Collector-base breakdown voltage
V
(BR)CBO
-50
V
Ic=-50A
Collector-emitter breakdown voltage
V
(BR)CEO
-50
V
Ic=-1mA
Emitter-base breakdown voltage
V
(BR)EBO
-5
V
I
E
=-50A
Collector cut-off current
I
CBO
-0.5
A
V
CB
=-50V
Emitter cut-off current
I
EBO
-0.5
A
V
EB
=-4V
Collector-emitter saturation voltage
V
CE(sat)
-0.3
V
I
C
=-5mA,I
B
=-0.25mA
DC current transfer ratio
h
FE
100 600
V
CE
=-5V,I
C
=-1mA
Input resistance
R
1
3.29
4.7
6.11
K
Transition frequency
f
T
250
MHz
V
CE
=-10V ,I
E
=5mA,f=100MHz
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