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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diodes
FBAT54TW
SURFACE MOUNT
SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
Low Forward Voltage Drop
Fast Switching
APPLICATION
Ultra high speed switching, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
F BAT54TW
Marking:KLA
Maximum Ratings @T
A
=25
Parameter Symbol
Limits
Unit
Peak Repetitive reverse voltage
DC Blocking Voltage
V
RM
V
R
30
V
Average Rectified Output Current
I
O
100
mA
Power Dissipation
P
D
150
mW
Junction temperature
T
J
125
Storage temperature range
T
STG
-65-125
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V
(BR)
I
R
= 100
A
30 V
Reverse voltage leakage current
I
R
V
R
=25V
2
u
A
Forward voltage
V
F
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
240
320
400
500
1000
mV
Total capacitance
C
T
V
R
=1V,f=1MHz
10
pF
Reverse recovery time
t
r r
I
F
=10mA, I
R
=10mA~1mA
R
L
=100
5
nS
WBFBP-06C
(220.5)
unit: mm
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