WBFBP-06C
(220.5)
unit: mm
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FMMBD4448HADW
SURFACE MOUNT SWITCHING DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
Switching Diode
FEATURES
Ultra-Small Surface Mount Package
Fast Switching Speed
High Conductance
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25
Parameter Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
V
RM
100
V
Peak Repetitive peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
80
V
RMS Reverse Voltage
V
R(RMS)
57 V
Forward Continuous Current
I
FM
500 mA
Average Rectified Output Current
I
O
250 mA
Non-Repetitive Peak forward surge current @=1.0s
@=1.0s
I
FSM
4.0
2.0
A
Power Dissipation
Pd 150 mW
Thermal Resistance Junction to Ambient
R
JA
625
/W
Junction temperature
T
J
150
Storage temperature range
T
STG
-65 to +150
Electrical Ratings @T
A
=25
Parameter Symbol
Min.
Typ.
Max.
Unit
Conditions
Reverse Breakdown Voltage
V
R
80
V
I
R
=100A
V
F1
0.62 0.72 V
I
F
=5mA
V
F2
0.855
V I
F
=10mA
V
F3
1.0
V I
F
=100mA
Forward voltage
V
F4
1.25
V I
F
=150mA
I
R1
0.1
A V
R
=70V
Reverse current
I
R2
25
nA V
R
=20V
Capacitance between terminals
C
T
3.5
pF V
R
=6V,f=1MHz
Reverse Recovery Time
t
rr
4
ns V
R
=6V,I
F
=5mA
1
FMMBD4448HADW
Marking:KA6
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