JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Transistors
FMMDT5451
TRANSISTOR
DESCRIPTION
PNP and NPN Epitaxial Silicon Transistor
FEATURES
Complementary Pair
One 5551-Type NPN, One 5401-Type PNP
Ultra-Small Surface Mount Package
APPLICATION
Ideal for Medium Power Amplification and Switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: KNM
KNM
5551 MAXIMUM RATINGS* T
A
=25
unless otherwise noted
Symbol
Parameter Value
Units
V
CBO
Collector-Base Voltage
180 V
V
CEO
Collector-Emitter Voltage
160
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current -Continuous
0.2
A
P
C
Collector Dissipation
0.15
W
R
JA
Thermal Resistance, Junction to Ambient
625
K/W
T
J
Junction Temperature
150
T
stg
Storage Temperature range
-55-150
5401 MAXIMUM RATINGS* T
A
=25
unless otherwise noted
Symbol Parameter
Value
Units
V
CBO
Collector- Base Voltage
-160
V
V
CEO
Collector-Emitter Voltage
-150
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current -Continuous
-0.2
A
P
C
Collector Dissipation
0.15 W
R
JA
Thermal Resistance, Junction to Ambient
625
K/W
T
J
Junction Temperature
150
T
stg
Storage Temperature range
-55-150
WBFBP-06C
(220.5)
unit: mm
1
E1,B1,C1=NPN 5551 Section
E2,B2,C2=PNP 5401 Section
5551 ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=100
A,I
E
=0
180 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=1mA, I
B
=0 160
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 10
A, I
C
=0
6 V
Collector cut-off current
I
CBO
V
CB
= 120V I
E
=0
50
n
A
Emitter cut-off current
I
EBO
V
EB
= 4V, I
C
=0
50
nA
h
FE
1
V
CE
= 5 V, I
C
= 1 mA
80
h
FE
2
V
CE
= 5 V, I
C
= 10 mA
80
250
DC current gain
h
FE
3
V
CE
= 5 V, I
C
= 50 mA
30
I
C
= 10 mA, I
B
= 1 mA
0.15
Collector-emitter saturation voltage
V
CEsat
I
C
= 50 mA, I
B
= 5 mA
0.2
V
I
C
= 10 mA, I
B
= 1 mA
1
Base-emitter saturation voltage
V
BEsat
I
C
= 50 mA, I
B
= 5 mA
1
V
Transition frequency
f
T
V
CE
=10V,I
C
=10mA,,f=100MHz
100 300
MHz
Collector output capacitance
C
ob
V
CB
=10V,I
E
=0,f=1MHz
6
pF
Noise figure
NF
V
CE
=5V,I
c
=0.2mA,
f=1KHZ,Rg=1k
8
dB
5401 ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
=-100A , I
E
=0 -160
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= -1mA , I
B
=0 -150
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-10A, I
C
=0 -5
V
Collector cut-off current
I
CBO
V
CB
=-120 V , I
E
=0
-0.05
A
Emitter cut-off current
I
EBO
V
EB
=-3V , I
C
=0
-0.05
A
h
FE(1)
V
CE
=-5 V, I
C
=
-1mA
50
h
FE(2)
V
CE
=-5 V, I
C
= -10mA
60
240
DC current gain
h
FE(3)
V
CE
=-5 V, I
C
= -50mA
50
V
CE(sat)1
I
C
=-10 mA, I
B
=-1mA
-0.2
V
Collector-emitter saturation voltage
V
CE(sat)2
I
C
=-50 mA, I
B
=-5mA
-0.5
V
V
BE(sat)1
I
C
= -10 mA, I
B
=-1mA
-1
V
Base-emitter saturation voltage
V
BE(sat)2
I
C
= -50 mA, I
B
=-5mA
-1
V
Transition frequency
f
T
V
CE
= -10V, I
C
= -10mA
f = 100MHz
100 300
MHz
Output Capacitance
C
ob
V
CB
=-10V, I
E
= 0,f=1MHz
6
pF
Noise Figure
NF V
CE
= -5.0V, I
C
= -200A,
R
S
= 10,f = 1.0kHz
8.0
dB
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