JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-08A Plastic-Encapsulate Transistors
FMQT4292
TRANSISTOR
DESCRIPTION
PNP and NPN Epitaxial Silicon Transistor
FEATURES
Complementary Pair
Tow A42-Type NPN, Tow A92-Type PNP
Epitaxial Planar Die Construction
APPLICATION
IDEAL FOR LOW POWER AMPLIFICATION AND SWITCHING
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 4292
4292
A42 MAXIMUM RATINGS* T
A
=25
unless otherwise noted
Symbol Parameter Value
Units
V
CBO
Collector-Base Voltage
310 V
V
CEO
Collector-Emitter Voltage
305 V
V
EBO
Emitter-Base Voltage
5 V
I
C
Collector Current -Continuous
500 mA
T
J
, T
stg
Junction and Storage Temperature
-55-150
R
JA
Thermal Resistance, junction to Ambient
200
/mW
R
JC
Thermal Resistance, unction to Case
83.3
/mW
A92 MAXIMUM RATINGS* T
A
=25
unless otherwise noted
Symbol Parameter Value
Units
V
CBO
Collector-Base Voltage
-300 V
V
CEO
Collector-Emitter Voltage
-300 V
V
EBO
Emitter-Base Voltage
-5 V
I
C
Collector Current -Continuous
-500 mA
T
J
, T
stg
Junction and Storage Temperature
-55-150
R
JA
Thermal Resistance, junction to Ambient
200
/mW
R
JC
Thermal Resistance, unction to Case
83.3
/mW
WBFBP-08A
(440.5)
unit: mm
1
A42 ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 100
A, I
E
=0
310 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 1 mA, I
B
=0 305
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 100
A, I
C
=0
5 V
Collector cut-off current
I
CBO
V
CB
=200V, I
E
=0
0.25
A
Emitter cut-off current
I
EBO
V
EB
= 5V, I
C
=0
0.1
A
H
FE(1)
V
CE
= 10V, I
C
= 1mA
60
H
FE(2)
V
CE
= 10V, I
C
=10mA 100
200
DC current gain
H
FE(3)
V
CE
=10V, I
C
=30mA 60
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=20 mA, I
B
= 2mA
0.2
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
= 20 mA, I
B
=2mA
0.9
V
Transition frequency
f
T
V
CE
= 20V, I
C
= 10mA
f=
30MHz
50
MHz
A92 ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= -100
A, I
E
=0
-300 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
-1mA,
I
B
=0 -300
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= -100
A, I
C
=0
-5 V
Collector cut-off current
I
CBO
V
CB
=-200V, I
E
=0
-0.25
A
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
=0
-0.1
A
H
FE(1)
V
CE
= -10V, I
C
= -1mA
60
H
FE(2)
V
CE
= -10V, I
C
=-10mA 100 200
DC current gain
H
FE(3)
V
CE
= -10V, I
C
=-30mA 60
Collector-emitter saturation voltage
V
CE
(sat) I
C
=-20 mA, I
B
= -2mA
-0.2
V
Base-emitter saturation voltage
V
BE
(sat) I
C
= -20 mA, I
B
= -2mA
-0.9
V
Transition frequency
f
T
V
CE
=-20V, I
C
= -10mA
f=
30MHz
50 MHz
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