JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-05C
Digital transistors (built-in resistors)
FUMG9N
TRANSISTOR
DESCRIPTION
Epitaxial planar type NPN silicon transistor
(Built-in resistor type)
FEATURES
Two DTC114E in a package.
Mounting cost and area can be cut in half.
APPLICATION
Dual Digital Transistors for Inverter Drive
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Equivalent circuit MARKING:G9
G9
Absolute maximum ratings(Ta=25)
Parameter Symbol
Limits
Unit
Supply voltage
V
CC
50
V
Input voltage
V
IN
-10~40
V
I
O
50
Output current
I
C(MAX)
100
mA
Power dissipation
Pd 150
mW
Junction temperature
Tj 150
Storage temperature
Tstg -55~150
Electrical characteristics (Ta=25)
Parameter Symbol
Min.
Typ
Max.
Unit Conditions
V
I(off)
0.5
V
CC
=5V ,I
O
=100A
Input voltage
V
I(on)
3
V
V
O
=0.3V ,I
O
=10 mA
Output voltage
V
O(on)
0.3 V
I
O
/I
I
=10mA/0.5mA
Input current
I
I
0.88
mA
V
I
=5V
Output current
I
O(off)
0.5 A
V
CC
=50V, V
I
=0
DC current gain
G
I
30 V
O
=5V ,I
O
=5mA
Input resistance
R
1
7 10 13 K
Resistance ratio
R
2
/R
1
0.8 1 1.2
Transition frequency
f
T
250
MHz
V
CE
=10V ,I
E
=-5mA,f=100MHz
WBFBP-05C
(220.5)
unit: mm
1
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