JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
KTC4075
TRANSISTOR (NPN)
FEATURES
Excellent hFE linearity
High hFE
Low Noise
Complementary to KTA2014
MAXIMUM RATINGS* T
A
=25
unless otherwise noted
Symbol Parameter Value
Units
V
CBO
Collector-Base Voltage
60 V
V
CEO
Collector-Emitter Voltage
50 V
V
EBO
Emitter-Base Voltage
5 V
I
C
Collector Current -Continuous
150
mA
P
D
Total Device Dissipation
100
mW
T
J
, T
stg
Junction and Storage Temperature
-55-125
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= 100
A, I
E
=0
60 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 1mA, I
B
=0 50
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 100
A, I
C
=0
5 V
Collector cut-off current
I
CBO
V
CB
=60V, I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0
0.1
A
DC current gain
h
FE
V
CE
= 6V, I
C
=2mA 70
700
Collector-emitter saturation voltage
V
CEsat
I
C
=100mA, I
B
= 10mA
0.25
V
Transition frequency
f
T
V
CE
=10V, I
C
= 1mA
80
MHz
Collector output capacitance
C
ob
V
CE
=10V, I
E
=0, f=1MHz
3.5
dB
Noise figure
NF
V
CE
=6V,I
E
=0.1mA, f=1KHz,R
G
=10K
10 dB
CLASSIFICATION OF h
FE
Rank
O
Y
GR
BL
Range
70~140 120~240 200~400 350~700
Marking
LO
LY
LGR
LBL
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
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