JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
M8550
TRANSISTOR
PNP
FEATURES
Power dissipation
P
CM
: 0.625 W
Tamb=25
Collector current
I
CM
: -1 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= -100
A
I
E
=0
-40
V
Collector-emitter breakdown voltage
V(BR)
CEO
* I
C
= -0.1mA , I
B
=0
-25
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -100
A
I
C
=0
-6
V
Collector cut-off current
I
CBO
V
CB
= -35V , I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
= -20V , I
B
=0
-0.1
A
h
FE(1)
V
CE
=-1V, I
C
=-5mA
45
h
FE(2)
V
CE
=-1V, I
C
=-100mA
85
300
DC current gain
h
FE
3
V
CE
=-1V, I
C
=-800mA
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -800mA, I
B
=-80mA
-0.5
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=-800mA, I
B
=-80mA
-1.2
V
Transition frequency
f
T
V
CE
=-6V, I
C
= -20mA
f=30MHz
150
MHz
* Pulse Test
pulse width
300s
duty cycle
2%
1
2
3
TO
--
92
1.EMITTER
2. BASE
3. COLLECTOR
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