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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBT2222AE
TRANSISTOR
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
FEATURES
Complementary PN
P Type available (MMBT2907AE)
PPLICATION
general purpose amplifier, switching.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1P
C
1P
B E
MAXIMUM RATINGS
T
A
=25
unless otherwise noted
Symbol Parameter
Value
Units
V
CBO
Collector-Base Voltage
75
V
V
CEO
Collector-Emitter Voltage
40 V
V
EBO
Emitter-Base Voltage
6 V
I
C
Collector Current -Continuous
600
mA
P
C
Collector Dissipation
150
mW
T
J
Junction Temperature
150
T
stg
Storage Temperature
-55to+150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= 10
A,I
E
=0
75 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 10mA, I
B
=0 40
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=10
A,I
C
=0
6 V
Collector cut-off current
I
CBO
V
CB
=70 V,I
E
=0
0.1
A
Collector cut-off current
I
CEX
V
CE
=60V,V
BE(off)
=3V
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 3V,I
C
=0
0.1
A
h
FE(1)
V
CE
=10V,I
C
= 0.1mA
35
h
FE(2)
V
CE
=10V,I
C
= 1mA
50
h
FE(3)
V
CE
=10V,I
C
= 10mA
75
h
FE(4)
V
CE
=10V,I
C
= 150mA
100
400
DC current gain
h
FE(5)
V
CE
=10V,I
C
= 500mA
40
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=500mA,I
B
= 50mA
I
C
=150mA,I
B
=15mA
1
0.3
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=500mA,I
B
= 50mA
I
C
=150mA,I
B
=15mA
2
1.2
V
Transition frequency
f
T
V
CE
=20V, I
C
= 20mA
f=
100MHz
300 MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=
0
, f=
1M
Hz
8
pF
Noise figure
NF
V
CB
=10V,I
c
=0.1mA,
f=1KHz,Rs=1K
4
dB
WBFBP-03A
(1.61.60.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR
M in .
M a x .
M in .
M a x .
A
0 .4 5 0
0 .5 5 0
0 .0 1 8
0 .0 2 2
A 1
0 .0 1 0
0 .0 9 0
0 .0 0 0
0 .0 0 4
b
0 .2 3 0
0 .3 3 0
0 .0 0 9
0 .0 1 3
b 1
D
1 .5 5 0
1 .6 5 0
0 .0 6 1
0 .0 6 5
E
1 .5 5 0
1 .6 5 0
0 .0 6 1
0 .0 6 5
D 2
E 2
e
L
L 1
L 2
L 3
L 4
k
z
0 .3 2 0 R E F .
0 .0 1 3 R E F .
0 .1 6 0 R E F .
0 .0 0 6 R E F .
S y m b o l
D im e n s io n s In M illim e t e r s
D im e n s io n s In In c h e s
1 .0 0 0 T Y P .
0 .0 4 0 T Y P .
0 .7 5 0 R E F .
1 .0 0 0 R E F .
0 .0 3 0 R E F .
0 .0 4 0 R E F .
0 .3 2 0 R E F .
0 .0 1 3 R E F .
0 .2 3 0 R E F .
0 .1 8 0 R E F .
0 .2 8 0 R E F .
0 .0 1 1 R E F .
0 .2 5 0 R E F .
0 .2 0 0 R E F .
0 .0 0 9 R E F .
0 .0 0 7 R E F .
0 .0 1 0 R E F .
0 .0 0 8 R E F .
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