2002. 10. 9
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SEMICONDUCTOR
TECHNICAL DATA
E30A27VS, E30A27VR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=30A.
POLARITY
E30A27VS E30A27VR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A1
A2
A3
B1
D3
D2
B2
C1
C2
D1
2.0 0.3
1.9 0.3
8.5 0.3
E
10.0 0.3
13.5 0.3
24.0 0.5
10.0 0.3
5.0 0.3
2.5 0.3
5.0 0.3
4.5 0.3
9.0 0.3
1.0 0.3
4.4 0.5
0.6 0.3
DIM
MILLIMETERS
F
G
H
T
A3
A2
A1
D3
E
F
G
D2
D1
T
H
C1
C2
B1
B2
MR
+
_
+
_
+
_
+
_
+_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Zener Voltage
V
Z
I
Z
=10mA
24
-
30
V
Peak Forward Voltage
V
FM
I
FM
=100A
-
-
1.2
V
Repetitive Peak Reverse Current
I
RRM
V
RRM
=24V
-
-
50
A
Zener Voltage
Temperature Coefficient
r
Z
I
Z
=10mA
23
-
36
mV/
Reverse Recovery Time
t
rr
I
F
=0.1A, I
R
=0.1A
-
-
15
S
Temperature Resistance
R
th
DC total junction to case
-
-
1.0
/W
CHARACTERISTIC
SYMBOL
RATING
UNIT
DC Reverse Voltage
V
DC
24
V
Average Forward Current
I
F(AV)
30
A
Peak 1 Cycle Surge Current
I
FSM
250 (50Hz)
A
Non-Repetitive Reverse 1 Cycle
Surge Current
I
RSM
50
A
Junction Temperature
T
j
-40 150
Storage Temperature Range
T
stg
-40 150
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