2002. 10. 9
1/1
SEMICONDUCTOR
TECHNICAL DATA
E30A2CDS, E30A2CDR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=30A.
Reverse Voltage : 200V(Min)
POLARITY
E30A2CDS E30A2CDR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
C
D
1
PD
9.5 0.2
8.4 0.2
1.2
R0.5
1.5
5 0.4
G
F
L1
3.1 0.1
MILLIMETERS
DIM
E
L2
DIM
MILLIMETERS
TYPE
R
S
POLARITY
23.0 1.0
19.0 1.0
A
B
E
C
D
F
L1
G
L2
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Peak Forward Voltage
V
FM
I
FM
=100A
-
-
1.20
V
Reverse Voltage
V
RM
I
R
=5mA
200
-
-
V
Repetitive Peak Reverse Current
I
RRM
V
R
=200V
-
-
50
A
Reverse Recovery Time
t
rr
I
F
=-I
R
100mA
-
-
15
S
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150 , V
R
=V
RM
-
-
2.5
mA
Temperature Resistance
R
th
Junction to case
-
1.0
-
/W
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
200
V
Average Forward Current
I
F(AV)
30
A
Peak 1 Cycle Surge Current
I
FSM
300
(10ms Condition)
A
Junction Temperature
T
j
-40 200
Storage Temperature Range
T
stg
-40 200
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