2002. 4. 16
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SEMICONDUCTOR
TECHNICAL DATA
E35A27VBS, E35A27VBR
STACK SILICON DIFFUSED DIODE
Revision No : 4
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=35A.
Zener Voltage : 27V(Typ.)
POLARITY
E35A27VBS (+ Type)
E35A27VBR (- Type)
MAXIMUM RATING (Ta=25)
DIM
MILLIMETERS
B-PF
11.5 MAX
12.75+0.09-0.00
1.3 0.04
4.2 0.2
8.0 0.2
TYP 0.5
10.0 0.2
0.4 0.1x45
0.2+0.1
28.35 0.5
A
8.5 MAX
H
B
C
D
E
F
G
H
I
J
K
F
E I
D
G
B
J
K
A
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
FM
=100A
-
-
1.10
V
Zener Voltage
V
Z
I
Z
=10mA
24
27
29
V
Reverse Current
I
R
V
R
=20V
-
-
0.2
A
Transient Thermal Resistance
V
F
I
FM
=100A, I
M
=100mA, Pw=100mS
-
-
70
mV
Breakdown Voltage
V
br
I
rsm
=42A, Pw=10mS
-
-
34
V
Temperature Coefficient
T
I
Z
=10mA
-
15.7
-
mV/
Reverse Leakage Current Under
High Temperature
HI
R
Ta=150, V
R
=20V
-
-
100
A
Temperature Resistance
R
th
DC total junction to case
-
-
0.8
/W
CHARACTERISTIC
SYMBOL
RATING
UNIT
Average Forward Current
I
F(AV)
35
A
Peak 1 Cycle Surge Current
I
FSM
300 (60Hz)
A
Non-Repetitive Peak
Reverse Surge Current
(10mS)
I
RSM
42
A
Transient Peak Reverse
Voltage
V
RSM
22
V
Peak Reverse Voltage
V
RM
20
V
Junction Temperature
T
j
-40215
Storage Temperature Range
T
stg
-40215
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