2003. 2. 25
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SEMICONDUCTOR
TECHNICAL DATA
KDR368
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F(2)
=0.23V (Typ.)
Small Package : USC.
MAXIMUM RATING (Ta=25 )
USC
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
2.50 0.1
1.25 0.05
0.90 0.05
0.30+0.06/-0.04
1.70 0.05
MIN 0.17
0.126 0.03
0~0.1
0.15 0.05
0.4 0.05
2 +4/-2
L
M
4~6
I
1.0 MAX
CATHODE MARK
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
20
V
Reverse Voltage
V
R
20
V
Maximum (Peak) Forward Current
I
FM
200
mA
Average Forward Current
I
O
100
mA
Surge Current (10ms)
I
FSM
1
A
Power Dissipation
P
D
150*
mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.18
-
V
V
F(2)
I
F
=5mA
-
0.23
0.30
V
F(3)
I
F
=100mA
-
0.35
0.50
Reverse Current
I
R
V
R
=10V
-
-
20
A
Total Capacitance
C
T
V
R
=10V, f=1MHz
-
20
40
pF
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
Type Name
Marking
4
U
2003. 2. 25
2/2
KDR368
Revision No : 2
FORWARD CURRENT I (A)
F
10
0
FORWARD VOLTAGE V (V)
F
I - V
F
F
100
1m
10m
100m
0
POWER DISSIPATION P (mW)
50
AMBIENT TEMPERATURE Ta ( C)
P - Ta
0.1
0.2
0.3
0.4
0.5
Ta=100 C
Ta=75 C
Ta=50 C
Ta=25 C
Ta=0 C
Ta=-25 C
REVERSE VOLTAGE V (R)
R
R
T
C - V
CAPACITANCE C (pF)
T
0
0.3
0.1
30m
10m
1
3
10
20
10
20
30
40
f=1MHz
Ta=25 C
25
50
75
100
125
150
40
80
120
160
200
240
Mounted on a glass
epoxy circuit board
of 20 20mm, pad
dimension 4 4mm.
REVERSE CURRENT I (A)
R
10
0
REVERSE VOLTAGE V (V)
R
I - V
R
R
5
10
-6
-5
10
-4
10
Ta=25 C
10
-3
10
-2
15
20
25
Ta=75 C
Ta=125 C
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