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Электронный компонент: KTA2014E

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1999. 6. 7
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA2014E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTC4075E.
Small Package.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
1
3
2
E
B
D
A
G
H
C
J
1. EMITTER
2. BASE
3. COLLECTOR
+
_
+
_
+
_
+
_
+_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-150
mA
Base Current
I
B
-30
mA
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=-6V, I
C
=-2mA
70
-
400
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-100mA, I
B
=-10mA
-
-0.1
-0.3
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-1mA
80
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
4
7
pF
Noise Figure
NF
V
CE
=-6V, I
C
=-0.1mA
f=1kHz, Rg=10k
-
1.0
10
dB
Note : h
FE
Classification O(2):70 140, Y(4):120 240, GR(6):200 400
h Rank
Type Name
Marking
S
FE
1999. 6. 7
2/3
KTA2014E
Revision No : 0
C
COLLECTOR CURRENT I (mA)
0
-40
30
DC CURRENT GAIN h
FE
3k
-3
-1
-0.3
-0.1
COLLECTOR CURRENT I (mA)
C
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
h - I
V - I
C
COLLECTOR CURRENT I (mA)
-0.1
-0.1
BASE-EMITTER SATURATION
BASE CURRENT I (
A)
B
-0.3
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
f - I
C
COLLECTOR CURRENT I (mA)
0.1
3k
T
TRANSITION FREQUENCY f (MHz)
10
COLLECTOR-EMITTER SATURATION
-0.01
-0.1
COLLECTOR CURRENT I (mA)
C
V - I
-1
-2
-3
-4
-5
-6
-7
-80
-120
-160
-200
-240
I =-0.2mA
B
B
I =-0.5mA
B
I =-1.0mA
B
I =-1.5mA
B
I =-2.0mA
B
I =0mA
COMMON EMITTER
Ta=25 C
FE
C
-10
-30
-100
-300
50
100
300
500
1k
Ta=100 C
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=-25 C
V =-6V
V =-6V
CE
CE
V =-1V
V =-1V
COMMON EMITTER
CE(sat)
C
VOLTAGE V (V)
CE(sat)
-0.3
-1
-3
-10
-30
-100
-300
-0.03
-0.05
-0.1
-0.3
-0.5
-1
Ta=100
C
Ta=25 C
Ta=-25 C
COMMON EMITTER
I /I =10
C B
C
BE(sat)
VOLTAGE V (V)
BE(sat)
-0.3
-1
-10
-30
-100
-300
-3
-0.3
-0.5
-1
-3
-5
-10
COMMON EMITTER
I /I =10
Ta=25 C
C B
T
C
0.3
1
3
10
30
100
300
30
50
100
300
500
1k
COMMON EMITTER
V =-10V
Ta=25 C
CE
B
BE
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-3
-10
-30
-100
-300
-1k
COMMON EMITTER
V =-6V
CE
Ta=100
C
Ta=25
C
Ta=-25
C
1999. 6. 7
3/3
KTA2014E
Revision No : 0
COLLECTOR LPOWER DISSIPATION P (mW)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
25
50
75
100
125
50
100
150
200
150