1999. 11. 30
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTB985
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTD1347.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
G
H
K
L
1. EMITTER
2. COLLECTOR
3. BASE
P
TO-92L
7.20 MAX
5.20 MAX
2.50 MAX
0.60 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
F
J
M
O
Q
25
1.25
1.50
0.10 MAX
DEPTH:0.2
1
2
3
B
A
C
Q
K
F
F
M
M
N
N
O
H
L
J
D
C
N
G
P
H
H
E
D
H
R
S
12.50 0.50
R
1.00
S
1.15 MAX
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification A:100 200, B:140 280, C:200 400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-60
V
Vollector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-3
A
Collector Current (Pulse)
I
CP
-6
A
Collector Power Dissipation
P
C
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNIT.
Collector Cut-off Current
I
CBO
V
CB
=-40V, I
E
=0
-
-
-1
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-1
DC Current Gain
h
FE
(1) (Note)
V
CE
=-2V, I
C
=-100
100
-
400
h
FE
(2)
V
CE
=-2V, I
C
=-3A
35
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-2A, I
B
=-100
-
-0.35
-0.7
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-2A, I
B
=-100
-
-0.94
-1.2
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-50
-
150
-
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1
-
39
-
Switching
Time
Turn-on Time
t
on
-
70
-
nS
Storage Time
t
stg
-
450
-
Fall Time
t
f
-
35
-
IB2
470
25
5V
-25V
-10I 1=10I =I =1A
B
B2
C
100
50
VR
I B1
PW=20
s
DC 1%
R8
INPUT
<
=
1999. 11. 30
2/3
KTB985
Revision No : 1
COLLECOTR CURRENT I (A)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
10
DC CURRENT GAIN h
FE
-0.3
-0.1
-0.03
-0.01
COLLECTOR CURRENT I (A)
C
h - I
CE
COLLECTOR EMITTER VOLTAGE V (V)
0
-2
-4
-6
0
COLLECTOR CURRENT I (A)
-0.4
-0.8
-1.2
-1.6
-2.0
-1.0
-2.0
-3.0
-4.0
-5.0
I =0
B
FE
C
-1
-3
-10
30
50
100
300
500
1k
V =-2V
CE
-8 -10 -12
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-0.5
-1.5
-2.5
-3.5
-4.5
-5mA
-10mA
-20mA
-50mA
-100mA
-200mA
COLLECTOR CURRENT I (A)
0
0
-0.8
-1.6
C
-2.4
-3.2
BASE EMITTER VOLTAGE V (V)
-0.4
I - V
C
BE
BE
-0.2
-0.6
-0.8
-1.0
-1.2
-0.4
-1.2
-2.0
-2.8
V =-2V
CE
Ta=75
C
25
C
-25
C
C
CE
I - V
C
-14 -16 -18 -20
-2.0
I =0
B
-2mA
-4mA
-6mA
-8mA
-10mA
-12mA
-14mA
Ta=75 C
Ta=25 C
Ta=-25 C
-0.01
VOLTAGE V (mV)
-10
-100
-30
-50
-500
-300
CE(sat)
-1K
COLLECTOR CURRENT I (A)
-0.1
-0.03
-0.3
-1
C
-3
-10
V - I
CE(sat)
C
I /I =20
C B
Ta=-25 C
Ta=25 C
Ta=75 C
COLLECTOR EMITTER SATURATION
BASE-EMITTER SATURATION
COLLECTOR CURRENT I (A)
-0.03
-0.01
-0.1
-0.5
-0.3
-0.1
-0.3
-1
-10
-3
C
BE(sat)
-10
-3
-1
-5
BE(sat)
V - I
C
C
I /I =20
VOLTAGE V (V)
Ta=-25 C
Ta=75 C
Ta=25 C
B
1999. 11. 30
3/3
KTB985
Revision No : 1
1.2
COLLECTOR DISSIPATION P (W)
AMBIENT TEMPERATURE Ta ( C)
0.8
1.0
0.4
0.2
0.6
0
0
20
120
40
60
100
80
160
140
-0.03
COLLECTOR CURRENT I (A)
GAIN-BANDWIDTH PRODUCT f (MHz)
-0.01
1.8
1.6
1.4
C
500
100
300
30
50
10
T
1k
V =10V
C
-1
-0.3
-0.1
Pc - Ta
-3
-10
CE
f - I
T
C
COLLECTOR CURRENT I (A)
COLLECTOR EMITTER VOLTAGE V (V)
Ta=25 C ONE PULSE
-0.3
-0.05
-0.5
-0.3
-0.1
-0.03
-0.02
-0.1
-1
DC
O
per
atio
n
-1
-3
-10
CE
-100
-30
SAFE OPERATING AREA
COLLECTOR BASE VOLTAGE V (V)
OUTPUT CAPACITANCE C (pF)
I MAX.
CP
-0.3
-0.1
-10
C
-5
-3
I
C
ob
1
3
5
10
50
30
-10
-3
-1
100
m
s
10
m
s
1m
s
100
C - V
ob
CB
f=1MHz
-30
-100
CB
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