1999. 11. 30
1/1
SEMICONDUCTOR
TECHNICAL DATA
MPSA06
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
DRIVER STAGE AMPLIFIER APPLICATIONS.
VOLTAGE AMPLIFIER APPLICATIONS.
FEATURES
Complementary to MPSA56.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=80V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
CEO
V
CE
=60V, I
B
=0
-
-
100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
80
-
-
V
DC Current Gain
h
FE
(1)
V
CE
=1V, I
C
=10mA
100
-
-
h
FE
(2)
V
CE
=1V, I
C
=100mA
100
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
-
-
0.25
V
Base-Emitter Voltage
V
BE
V
CE
=1V, I
C
=100mA
-
-
1.2
V
Transition Frequency
f
T
V
CE
=2V, I
C
=10mA
100
-
-
MHz
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
500
mA
Emitter Current
I
E
-500
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature
T
stg
-55 150
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