1997. 10. 28
1/3
SEMICONDUCTOR
TECHNICAL DATA
T12A6CI
Bi-Directional Triode Thyristor
12A Mold TRIAC
Revision No : 2
AC POWER CONTROL APPLICATION.
FEATURES
Repetitive Peak Off-state Voltage : V
DRM
=600V.
R.M.S On-State Current : I
T(RMS)
=12A.
High Commutaing (dv/dt)
Isolation Voltage : V
ISOL
=1500V AC
(UL Recognized : E166398)
APPLICATIONS
Switching Mode Power Supply
Speed Control of Small Motors
Solid State Relay
Light Dimmer
Washing Machine
Temperature Control of Heater
DIM
MILLIMETERS
1. T1
2. T2
3. GATE
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Non-Repetitive Peak Off-state Voltage
V
DSM
700
V
Repetitive Peak Off-state Voltage
V
DRM
600
V
R.M.S On-state Current
(Full Sine Waveform Tc=77 )
I
T(RMS)
12
A
Peak One Cycle Surge On-state Current
(Non-Repetitive)
I
TSM
120 (50Hz 1 Cycle)
132 (60Hz 1 Cycle)
A
I
2
t Limit Value (1mS t 10mS)
I
2
t
72
A
2
S
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G(AV)
0.5
W
Peak Gate Voltage
V
GM
10
V
Peak Gate Current
I
GM
2
A
Junction Temperature
T
j
-40 125
Storage Temperature Range
T
stg
-40 125
Isolation Voltage (Ac, t=1min.)
V
ISOL
1500
V
1997. 10. 28
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T12A6CI
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Repetitive Peak Off-state Current
I
DRM
V
DRM
=Rated
-
-
20
A
Gate Trigger Voltage
V
GT
V
D
=12V,
R
L
=20
T
2
(+), Gate(+)
-
-
1.5
V
T
2
(+), Gate(-)
-
-
1.5
T
2
(-), Gate(-)
-
-
1.5
T
2
(-), Gate(+)
-
-
-
Gate Trigger Current
I
GT
T
2
(+), Gate(+)
-
-
30
mA
T
2
(+), Gate(-)
-
-
30
T
2
(-), Gate(-)
-
-
30
T
2
(-), Gate(+)
-
-
-
Peak On-State Voltage
V
TM
I
TM
=17A
-
-
1.5
V
Gate Non-Trigger Voltage
V
GD
V
D
=Rated, Tc=125
0.2
-
-
V
Holding Current
I
H
V
D
=12V, I
TM
=1A
-
-
50
mA
Critical Rate of Rise of
Off-state Voltage
d
V
/d
t
T
j
=125 , V
DRM
=Rated
Exponential Rise
-
300
-
V/ S
Critical Rate of Rise of
Off-state Voltage at commutation
(d
V
/d
t
)C
T
j
=125 ,
(di/dt)C=-6.5A/mS, V
D
=2/3V
DRM
10
-
-
V/ S
Thermal Resistance
R
th(j-c)
Junction to Case, AC
-
-
3.0
/W
1997. 10. 28
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T12A6CI
Revision No : 2
R.M.S ON-STATE CURRENT I (A)
T(RMS)
T(RMS)
T(AV)
P - I
R.M.S ON-STATE CURRENT I (A)
T(RMS)
T(RMS)
Ta MAX - I
INSTANTANEOUS ON-STATE VOLTAGE
(V)
T
T
T
NUMBER OF CYCLES AT 60Hz
SURGE ON-STATE CURRENT(60Hz)
SURGE ON CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
INSTANTANEOUS ON-STATE CURRENT
(A)
T
MAXIMUM ALLOWABLE AMBIENT
TEMPERATURE Ta MAX ( C)
TEMPERATURE Tc MAX ( C)
MAXIMUM ALLOWABLE CASE
T(RMS)
R.M.S ON-STATE CURRENT I (A)
Tc MAX - I
T(RMS)
DISSIPATION P (W)
AVERAGE ON-STATE POWER
T(AV)
TRANSIENT THERMAL IMPEDANCE
r ( C-W)
th(j-c)
-
TIME
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS GATE VOLTAGE V (V)
G
INSTANTANEOUS GATE CURRENT I (mA)
G
GATE TRIGGER CHARACTERISTIC
10
10
1
0
10
10
-1
1
2
10
10
3
25 C
PEAK GATE
PEAK GATE
AVE
RA
GE
GA
TE
DIS
SIPA
TIO
N
GATE TRIGGER VOLTAGE
GATE NON TRIGGER VOLTAGE
DISSIPATION
VOLTAGE
CURRENT
PEAK GATE
TIME
1.8
1.4
1.0
0.6
10
0
-1
10
1
10
10
2
2.2
2.6
3.0
60
100
120
140
20
0
40
80
3.0
2.5
2.0
0
0.5
1.0
1.5
2
10
10
1
0
10
100
0
20
40
80
60
120
140
160
180
200
15
10
5
0
80
40
0
20
140
120
100
60
20
6
4
2
0
8
10
12
14
16
0
12
4
8
20
24
32
28
16
4.0
0
10
-1
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
10
1
2
10
10
3
(JUNCTION TO CASE)
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