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Электронный компонент: T1A6C

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2001. 5. 9
1/3
SEMICONDUCTOR
TECHNICAL DATA
T1A6C
Bi-Directional Triode Thyristor
1A Mold TRIAC
Revision No : 2
AC POWER CONTROL APPLICATION.
FEATURES
Repetitive Peak Off-state Voltage : V
DRM
=600V.
R.M.S on-State Current : I
T(RMS)
=1A.
High Commutation (dv/dt)
APPLICATIONS
Switching Mode Power Supply
Speed Control of Small Motors
Solid State Relay
Light Dimmer
Washing Machine
Temperature Control of Heater
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. T1
3. T2
2. GATE
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
Non-Repetitive Peak Off-state Voltage
V
DSM
700
V
Repetitive Peak Off-state Voltage
V
DRM
600
V
R.M.S On-state Current
(Full Sine Waveform Tc=56 )
I
T(RMS)
1
A
Peak One Cycle Surge On-state Current
(Non-Repetitive)
I
TSM
9 (50Hz 1 Cycle)
10 (60Hz 1 Cycle)
A
I
2
t Limit Value (1mS t 10mS)
I
2
t
0.4
A
2
S
Peak Gate Power Dissipation
P
GM
1
W
Average Gate Power Dissipation
P
G(AV)
0.1
W
Peak Gate Voltage
V
GM
6
V
Peak Gate Current
I
GM
0.5
A
Junction Temperature
T
j
-40 125
MAXIMUM RATINGS (Ta=25 )
2001. 5. 9
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T1A6C
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Repetitive Peak Off-state Current
I
DRM
V
DRM
=Rated
-
-
10
A
Gate Trigger Voltage
V
GT
V
D
=12V,
R
L
=20
T
2
(+), Gate(+)
-
-
2.0
V
T
2
(+), Gate(-)
-
-
2.0
T
2
(-), Gate(-)
-
-
2.0
T
2
(-), Gate(+)
-
-
2.0
Gate Trigger Current
I
GT
T
2
(+), Gate(+)
-
-
5.0
mA
T
2
(+), Gate(-)
-
-
5.0
T
2
(-), Gate(-)
-
-
5.0
T
2
(-), Gate(+)
-
-
10
Peak On-State Voltage
V
TM
I
TM
=1.5A
-
-
1.6
V
Gate Non-Trigger Voltage
V
GD
V
D
=Rated, Tc=125
0.2
-
-
V
Holding Current
I
H
V
D
=12V, I
TM
=1A
-
-
10
mA
Critical Rate of Rise of
Off-state Voltage at Commutation
(d
V
/d
t
)C
T
j
=125 ,
(di/dt)C=-0.5A/mS, V
D
=2/3V
DRM
2.0
-
-
V/ S
Thermal Resistance
R
th(j-c)
Junction to Case, AC
-
-
40
/W
R
th(j-a)
Junction to Ambient, AC
-
-
180
2001. 5. 9
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T1A6C
Revision No : 2
INSTANTANEOUS GATE VOLTAGE
(V)
G
INSTANTANEOUS GATE CURRENT
(mA)
G
GATE TRIGGER CHARACTERISTIC
0
TIME t (ms and s)
th(j-a)
th(j-c)
r , r - t
R.M.S ON-STATE CURRENT I (A)
T(RMS)
T(RMS)
P - I
INSTANTANEOUS ON-STATE VOLTAGE
(V)
T
T
T
NUMBER OF CYCLES AT 60Hz
SURGE ON-STATE CURRENT
PEAK SURGE ON-STATE CURRENT I (A)
0.6
1.0
1.2
1.4
0.2
0
0.4
0.8
0
0.2
0
20
INSTANTANEOUS ON-STATE CURRENT
(A)
T
AVERAGE ON-STATE POWER
DISSIPATION P (W)
TEMPERATURE Tc MAX, Ta MAX ( C)
MAXIMUM ALLOWABLE CASE AMBIENT
T(RMS)
R.M.S ON-STATE CURRENT I (A)
Tc MAX, Ta MAX - I
T(RMS)
r , r ( C/W)
TRANSIENT THERMAL IMPEDANCE
th(j-c)
-
1
3
0.1
0.3
0.5
1
3
5
300
1K
100
30
10
10
-40 C I
GT
25 C I
GT
V =0.2V
GD
P =1W
GM
25 C V
GT
G(AV)
P =0.1W
GM
I
GM
V
V =6V
GM
GT
-40 C V
0.05
0.03
0.4
T =25 C
0.1
0.5
0.3
3
1
5
j
0.8
1.2
1.6
2.0
2.4
2.8
0
1
3
5
10
30
50
100
2
4
6
8
10
TSM
(NON-REPETITIVE)
0.4
0.6
0.8
1.0
1.2
1.4
T(AV)
T(AV)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
40
60
80
100
120
140
Ta MAX
Tc MAX
1
3
10
30
200
100
300
1k
1
3
5
10
30
50
100
r
th(j-a)
th(j-a)
th(j-c)
r
(s)
(s)
(ms)