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C L - 2 0 9
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
The CL-209 is a high-power GaAlAs IRED mounted in
a TO-46 metal stem with clear epoxy encapsulation,
providing wide beam angle.
F E A T U R E S
High output power
Wide beam angle 8 5 d e g .
TO-46 epoxy potting type
A P P L I C A T I O N S
Optical switches
Transportation sensors
D I M E N S I O N S
(Unit : mm)
Forward voltage
Reverse current
Peak emission wavelength
* 3
Spectral bandwidth
Radiant intensity
Half angle
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 2 0 m A
V
R
= 5 V
I
F
= 5 0 m A
I
F
= 5 0 m A
I
F
= 2 0 m A
I t e m
T y p .
1 . 3
8 8 0
7 0
3 0
8 5
V
F
I
R
p
P
O
1 . 6
1 0
V
A
n m
n m
m V
d e g .
S y m b o l
C o n d i t i o n s
M i n .
M a x .
U n i t .
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Power dissipation
Pulse forward current
* 1
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
P
D
I
F P
T o p r .
T s t g .
T s o l .
5
8 0
1 3 0
0 . 8
2 08 0
2 08 0
2 4 0
V
m A
m W
A
U n i t
( T a = 2 5)
*1. pulse width tw 100
sec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
*3. Measured by tester of KODENSHI CORP.
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C L - 2 0 9
Infrared Emitting Diodes(GaAlAs)
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current Vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
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