- 1-
E L - 5 5 L
Infrared Emitting Diodes(GaAs)
K O D E N S H I
Forward voltage
Reverse current
C a p a c i t a n c e
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
The EL-55L is a high-power GaAs IRED mounted in a
clear plastic package. This LED emits infrared light
through two plastic lenses on both sides of the
package is ideally suited for use with VTR tape-end
s e n s o r s .
F E A T U R E S
C o m p a c t
Low profile package
L o w - c o s t
Sidelooking plastic package
Long-lead type
A P P L I C A T I O N S
VTR type-end sensor
D I M E N S I O N S
(Unit : mm)
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Pulse forward current
* 1
Power dissipation
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
I
F P
P
D
T o p r .
T s t g .
T s o l .
5
5 0
1
7 5
- 2 5 ~ + 8 5
- 3 0 ~ + 8 5
2 6 0
V
m A
A
m W
U n i t
( T a = 2 5)
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 5 0 m A
V
R
= 5 V
f = 1 M H z
I
F
= 2 0 m A
I
F
= 2 0 m A
I
F
= 2 0 m A
I t e m
T y p .
1 . 3
2 5
2 . 0
9 4 0
5 0
-
V
F
I
R
C t
P
O
p
0 . 7
-
1 . 5
1 0
-
V
A
p F
m W / s r
n m
n m
d e g .
S y m b o l
C o n d i t i o n s
M i n .
M a x .
U n i t .
*1. pulse width tw 100
sec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
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