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Электронный компонент: K404

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Photocoupler
The K401 has one channel in a 4-pin mini-flat SMD package.
The K402 has two channels in a 8-pin mini-flat SMD package.
The K404 has four channels in a 16-pin mini-flat SMD package.
FEATURES
Mini-flat Package
Collector-Emitter Voltage : Min.30V
Current Transfer Ratio : Type 600%
(at I
F
=
A
1mA, V
CE
=2V)
Electrical Isolation Voltage : AC3750V
rms
APPLICATIONS
AC Signal Input
Automatic Vending Machine
Copiers, Industrial Robots
K401 K402 K404
These Photocouplers consist of two Gallium Arsenide Infrared Emitting
Diodes and a Silicon NPN Photo Darlington transistor per a channel.
Interface between two circuits of different potential
1/3
DIMENSION (Unit : mm)
K401
K402
K404
Orientation Mark
4
.
4
0
.
2
2.54 0.25
3.6 0.2
0.4 0.1
0
.
1
0
.
1
2
.
5
0
.
2
5.2 0.2
7.0 0.5
0.4Min.
0
.
1
5
0
.
0
5
4
.
4
0
.
2
2
.
5
0
.
2
8.7 0.2
Orientation Mark
0
.
1
5
0
.
0
5
0.4Min.
7.0 0.5
5.2 0.2
2.54 2.54
4
.
4
0
.
2
18.8 0.2
Orientation Mark
5.2 0.2
7.0 0.5
0.4Min.
2
.
5
0
.
2
0
.
1
0
.
1
2.54 2.54
0
.
1
5
0
.
0
5
1 2
4 3
8
6
5
7
2
3
4
1
1
15
13 11 9
14
16
12
10
4
3
2 6
5 7 8
Photocoupler
MAXIMUM RATINGS (Ta=25
)
*1. Input current with 100
s pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
ELECTRO-OPTICAL CHARACTERISTICS
I
F
=
10mA
V=0, f=1kHz
I
C
=0.5mA
I
E
=0.1mA
I
F
=0, V
CE
=10V
V
CE
=0, f=1KHz
I
F
=
1mA, V
CE
=2V
I
F
=
1mA, I
C
=2mA
V=0, f=1KHz
V
CE
=10V, R
L
=100
I
C
=10mA
*4. CTR=(I
C
/I
F
) X 100 (%)
Power Dissipation P
D
70 mW
-
Coupled
Input-Output Capacitance
-
-
-
Fall Time
tf
Parameter
Symbol
Rating
1
Collector Current
Unit
Input
Forward Current
I
F
Peak Forward Current
*1
I
FP
Junction temperature T
J
50 mA
A
125
Output
Collector-Emitter Breakdown Voltage
BV
CEO
30
Emitter-Collector Breakdown Voltage
BV
ECO
5
I
C
50
V
V
mA
Collector Power Dissipation
P
C
150
mW
Input to Output Isolation Voltage
*2
V
iso
AC3750
V
rms
Storage Temperature T
stg
-55~+125
Operating Temperature T
opr
-30~+85
Collector Dark Current
Input-Output Isolation Resistance
Total Power Dissipation
P
tot
250
mW
Capacitance
Current Transfer Ratio
*4
Collector-Emitter Saturation Voltage
Input
Output
Forward Voltage
Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
-
tr
-
R
IO
0.8
5
10
11
C
IO
RH=40~60%, V=500V
Max.
1.30
-
-
-
100
pF
%
V
-
-
1.2
-
-
90
-
pF
T
sol
260
-
Unit.
pF
Symbol
V
F
V
V
nA
-
30
Typ.
1.15
V
K401 K402 K404
Parameter
Lead Soldering Temperature
*3
-
-
10
-
-
5
- 120
C
T
BV
CEO
CTR
V
CE(SAT)
BV
ECO
I
CEO
C
CE
Rise Time
Condition
30
300
Min.
-
2/3
(Ta=25
, unless otherwise noted)
Photocoupler
K401 K402 K404
D
a
r
k

C
u
r
r
e
n
t

I
C
E
O

(
u
A
)
Ambient Temperature T
a
( )
0
0.001
0.01
40
20
0.1
10
80
60 100
Dark Current vs.
Ambient Temperature
Output
Input
Test Circuit
V
IN
R
R
L
V
O
V
CC
Waveform
10%
90%
Switching Time Test Circuit
tr
tf
1
C
o
l
l
e
c
t
o
r

P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n

P
C

(
m
W
)
Collector Power Dissipation vs.
Ambient Temperature
250
40
Ambient Temperature T
a
( )
0
-20
0
20
150
50
100
200
80
60 100
V
CE
=10V
50
-20
0
30
F
o
r
w
a
r
d

C
u
r
r
e
n
t

I
F
(
m
A
)
10
20
40
0 20 40 60 100
80
Forward Current vs.
Ambient Temperature
T
a
=-55
Forward Voltage V
F
(V)
0.4
F
o
r
w
a
r
d

C
u
r
r
e
n
t

I
F

(
m
A
)
20
0
60
40
100
80
T
a
=25
0.8 1.2
T
a
=70
Forward Current vs.
Forward Voltage
1.6
T
a
=25
Collector Current vs.
Collector-Emitter Voltage
0
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t

I
C

(
m
A
)
10
20
30
40
10
8
6
4
2
Collector-Emitter Voltage V
CE
(V)
I
F
=1.5mA
I
F
=1mA
I
F
=2.5mA
I
F
=2.0mA
I
F
=3.0mA
I
F
=3.5mA
P
C
(max.)
Collector Current vs.
Forward Current
5
4
3
2
1
Forward Current I
F
(mA)
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t

I
C

(
m
A
)
10
15
20
5
0
40
25
30
T
a
=25
V
CE
=2V
6
10
R
e
s
p
o
n
s
e

T
i
m
e

t
r
,

t
f

(
u
s
)
0.05
10
Load Resistance R
L
()
0.2
0.1 0.5 1 2
V
CE
=10V
I
C
=10mA
T
a
=25
100
1000
5000
Response Time vs.
Load Resistance
tr
tf
3/3