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Электронный компонент: K4N29A

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Photocoupler
package.
FEATURES
Small Package Size
Collector-Emitter Voltage : Min.30V
Current Transfer Ratio : Type 1000% (at I
F
=10mA, V
CE
=10V)
Electrical Isolation Voltage : AC2500V
rms
UL Recognized File No. E107486
APPLICATIONS
Interface between two circuits of different potential
Telephone Line Receiver, CMOS Logic Interface
Power Supply Regulators
MAXIMUM RATINGS (Ta=25
)
*1. Input current with 300
s pulse width, 2% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
K4N29 K4N29A
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting
Diode and a Silicon NPN Photo Darlington transistor in a 6-pin
Lead Soldering Temperature
*3
T
sol
260
Operating Temperature T
opr
-30~+100
Storage Temperature T
stg
-55~+125
Input to Output Isolation Voltage
*2
V
iso
AC2500 V
rms
Collector Power Dissipation P
C
150 mW
V
V
V
Collector Current
I
C
100
mA
Output
Collector-Emitter Breakdown Voltage
BV
CEO
30
Emitter-Collector Breakdown Voltage
BV
ECO
5
Collector-Base Breakdown Voltage
BV
ECO
30
mA
V
A
Power Dissipation P
D
150 mW
Reverse Voltage V
R
5
Peak Forward Current
*1
I
FP
3
Parameter
Symbol
Rating
Unit
Input
Forward Current I
F
80
Total Power Dissipation
P
tot
250
mW
DIMENSION
(Unit : mm)
1/3
6
.
4
0
.
2
5
8.9 0.25
2.54 0.25
1
2
3
1.2
0.5
3
.
8
0
.
2
5
2
.
7
M
i
n
.
0
.
5
1
M
i
n
.
7.62 0.25
6.4
0.25
0 -15
6
5
4
Orientation Mark
4
5
6
1
2
3
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
Photocoupler
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25
, unless otherwise noted)
I
F
=10mA
VR=5V
V=0, f=1MHz
I
C
=1mA
I
E
=0.1mA
I
C
=0.1mA
I
F
=0, V
CE
=10V
V
CE
=0, f=1MHz
I
F
=50mA, I
C
=2mA
V=0, f=1MHz
V
CC
=10V, R
L
=100
I
C
=50mA, I
F
=200mA
*4. CTR=(I
C
/I
F
) X 100 (%)
CTR
I
F
=10mA, V
CE
=10V
RH=40~60%, V=500V
BV
CEO
V
CE(SAT)
BV
ECO
BV
CBO
Coupled
Turn-on Time
Turn-off Time
Condition
t
off
C
T
-
30
100
-
10
11
-
-
10
-
Typ.
1.15
V
K4N29 K4N29A
Parameter
Min.
-
Unit.
pF
-
-
1.0
-
-
-
-
Max.
1.30
-
-
Symbol
V
F
-
t
on
-
R
IO
-
1
-
35
-
-
5
pF
%
V
pF
V
V
V
30
-
-
-
5
Input
Output
Forward Voltage
Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
C
CE
C
IO
Collector-Base Breakdown Voltage
Input-Output Isolation Resistance
Input-Output Capacitance
Capacitance
Current Transfer Ratio
*4
Collector-Emitter Saturation Voltage
I
R
- - 10
Collector Dark Current I
CEO
- - 100 nA
Reverse Current
2/3
40
Photocoupler
K4N29 K4N29A
3/3
Ambient Temperature
T
a
(
)
Forward Current vs.
Ambient Temperature
0
-20 0 20
F
o
r
w
a
r
d

c
u
r
r
e
n
t
I
F

(
m
A
)
10
20
40
30
50
40 60 100
Collector-Emitter Voltage
V
CE
(V)
Collector Current vs.
Collector-Emitter Voltage
0 2 4 6
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
I
C

(
m
A
)
8 10
80
D
a
r
k

C
u
r
r
e
n
t
I
C
E
O

(
u
A
)
Ambient Temperature
T
a
(
)
0
0.001
0.01
40
20
0.1
10
80
60 100
Dark Current vs.
Ambient Temperature
80
Output
Input
Test Circuit
V
IN
R
R
L
V
O
V
CC
Waveform
10 %
90%
Switching Time Test Circuit
1
C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
I
C

(
m
A
)
Forward Current
I
F
(mA)
10
1
1
Collector Current vs.
Forward Current
100
1000
C
o
l
l
e
c
t
o
r

P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n
P
C

(
m
W
)
Collector Power Dissipation vs.
Ambient Temperature
250
40
Ambient Temperature
T
a
(
)
0
-20
0
20
150
50
100
200
80
60 100
60
I
F
=3mA
I
F
=2mA
I
F
=1mA
V
CE
=24V
V
CE
=10V
20
40
60
100
120
140
160
180
I
F
=4mA
10 100
0.1
T
a
=25
V
CE
=10V
Forward Voltage
V
F
(V)
20
0
0.4
100
120
140
60
40
80
F
o
r
w
a
r
d

C
u
r
r
e
n
t
I
F

(
m
A
)
1.2
0.8 1.6
T
a
=70
T
a
=25
T
a
=-55
Forward Current vs.
Forward Voltage
2.0
T
a
=25