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Электронный компонент: KK74LV640D

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TECHNICAL DATA
KK74LV640
Octal 3-State Inverting
Bus Transceiver
ORDERING INFORMATION
KK74LV640N Plastic
KK74LV640D SOIC
T
A
= -40
to 125 C for all packages
The 74LV640 is a low-voltage Si-gate CMOS device and is pin and
function compatible with 74HC/HCT640.
The 74LV640 provides six inverting buffers with Schmitt-trigger
action.

Wide Operating Voltage: 1.2 to 3.6 V
Optimized for Low Voltage applications: 1.0 to 3.6 V
Accepts TTL input levels between V
CC
=2.7 V and V
CC
=3.6 V
Low input current





PIN ASSIGNMENT
640
DIR
01
A
8
02
A
1
03
A
2
04
A
3
05
A
4
06
A
5
07
A
6
08
A
7
09
GND
10
20
19
18
17
16
15
14
13
12
11
B
8
B
1
B
2
B
3
B
4
B
5
B
6
B
7
OE
V
CC

LOGIC DIAGRAM
18
B
8
03
17
B
1
A
1
04
16
B
2
A
2
05
15
B
3
A
3
06
14
B
4
A
4
07
13
B
5
A
5
08
12
B
6
A
6
09
11
B
7
A
7
01
DIR
02
A
8
19
OE
PIN 20=V
CC
PIN 10 = GND
FUNCTION TABLE
Inputs Inputs/Outputs
OE DIR
L L
A=B
input
L H
input
B=A
H X Z Z
1
KK74LV640
MAXIMUM RATINGS
*
Symbol Parameter
Value
Unit
V
CC
DC supply voltage (Referenced to GND)
-0.5
+5.0
V
I
IK
*
1
DC input diode current
20
mA
I
OK
*
2
DC output diode current
50
mA
Io*
3
DC output source or sink current
-bus driver outputs
35
mA
I
GND
DC GND current for types with
- bus driver outputs
70
mA
I
CC
DC V
CC
current for types with
- bus driver outputs
70
mA
P
D
Power dissipation per paskade, plastic DIP+
SOIC package+
750
500
mW
Tstg Storage
temperature
-65
+150
C
T
L
Lead temperature, 1.5 mm from Case for 10 seconds
(Plastic DIP ), 0.3 mm (SOIC Package)
260
C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 12 mW/
C from 65 to 125C
SOIC Package: : - 8 mW/
C from 65 to 125C
*
1
: V
I
< -0.5V or V
I
> V
CC
+0.5V
*
2
: Vo
< -0.5V or Vo > V
CC
+0.5V
*
3
: -0.5V
< Vo < V
CC
+0.5V
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
1.2
3.6
V
V
IN,
V
OUT
DC Input Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
-40
+125
C
t
LH
, t
HL
Input Rise and Fall Time
V
CC
=1.2 V
V
CC
=2.0 V
V
CC
=3.0 V
V
CC
=3.6 V
0 1000
700
500
400
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range GND
(V
IN
or
V
OUT
)
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
). Unused
outputs must be left open.
2
KK74LV640
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Guaranteed Limit
25
C
-40
C 85C
-40
C
125
C
Symbol Parameter
Test
Conditions
V
CC
V
min max
min max
min max
Unit
V
IH
High-Level
Input Voltage
V
O
= V
CC
-
0.1 V
1.2
2.0
3.0
3.6
0.9
1.4
2.1
2.5
-
-
-
-
0.9
1.4
2.1
2.5
-
-
-
-
0.9
1.4
2.1
2.5
-
-
-
-
V
V
IL
Low -Level
Input Voltage
1.2
2.0
3.0
3.6
-
-
-
-
0.3
0.6
0.9
1.1
-
-
-
-
0.3
0.6
0.9
1.1
-
-
-
-
0.3
0.6
0.9
1.1
V
V
I
= V
IH
or V
IL
I
O
= -50
A
1.2
2.0
3.0
3.6
1.1
1.92
2.92
3.52
-
-
-
-
1.0
1.9
2.9
3.5
-
-
-
-
1.0
1.9
2.9
3.5
-
-
-
-
V
OH
High-Level
Output Voltage
V
I
= V
IH
or V
IL
I
O
= -8.0
mA
3.0
2.48
-
2.34
-
2.20
-
V
V
I
= V
IH
or V
IL
I
O
= 50
A
1.2
2.0
3.0
3.6
-
-
-
-
0.09
0.09
0.09
0.09
-
-
-
-
0.1
0.1
0.1
0.09
-
-
-
-
0.1
0.1
0.1
0.09
V
OL
Low-Level
Output Voltage
V
I
= V
IH
or V
IL
I
O
= 8.0
mA
3.0
- 0.33
- 0.40
- 0.50
V
I
IL
Low-Level
Input Leakage
Current
V
I
=0
V * - -0.1 - -1.0 - -1.0 A
I
IH
High-Level
Input Leakage
Current
V
I
= V
* - 0.1 - 1.0 - 1.0 A
I
OZ
Maximum
Three-State
Leakage Current
V
I
= V
IL
or
V
IH
V
O
=V
CC
or
GND
1.2
*
-
0.5
-
5.0
-
10
A
I
CC
Quiescent
Supply Current
(per Package)
V
I
=0 V or
V
I
O
= 0
A
* - 8.0 - 80.0
- 180.0 A
.
3
KK74LV640
AC ELECTRICAL CHARACTERISTICS
(C
L
=50 pF, t
LH
=t
HL
= 6.0 ns, R
L
=1 k)
Guaranteed Limit
25
C
-40
C 85C
-40
C
125
C
Symbol Parameter
Test
Conditions
V
CC
V
min max
min max
min max
Unit
t
PLH
, t
PHL
Propagation
Delay, A to B ,
B to A
V
IL
=0 V
V
IH
=V
CC
t
LH
= t
HL
=6.0 ns
L
= 50 pF
1.2
2.0
*
-
-
-
100
23
14
-
-
-
125
28
18
-
-
-
140
34
21
ns
t
PLZ
, t
PHZ
Propagation
Delay ,
Direction or
Output Enable
to A or B
V
IL
=0 V
V
IH
=V
CC
t
LH
= t
HL
=6.0 ns
L
= 50 pF
1.2
2.0
*
-
-
-
120
30
20
-
-
-
140
37
24
-
-
-
160
43
28
ns
t
PZL
, t
PZH
Propagation
Delay ,
Direction or
Output Enable
to A or B
V
IL
=0 V
V
IH
=V
CC
t
LH
= t
HL
=6.0 ns
L
= 50 pF
1.2
2.0
*
-
-
-
120
28
17
-
-
-
140
35
21
-
-
-
160
43
26
ns
t
TLH
, t
THL
Output
Transition
Time, Any
Output
V
IL
=0 V
V
IH
=V
CC
t
LH
= t
HL
=6.0 ns
L
= 50 pF
1.2
2.0
*
-
-
-
60
16
10
-
-
-
75
20
13
-
-
-
90
24
15
ns
C
I
Input
Capacitance
(Pin 1 or Pin 19)
3.0
- 7.0 - - - - pF
C
I/O
Input
Capacitance
(Pin 2-9 or Pin
11-18)
3.0
-
20.0
- - - - pF
C
PD
V
I
=0 V or
V
- 50 - - - - pF
* - V
CC
=3.3
0.3V
0.1
0.1
0.1
0.1
0.9
0.9
0.9
0.9
V
1
V
1
V
1
V
1
t
PHL
t
THL
t
TLH
t
HL
t
PLH
t
LH
B (A)
GND
V
CC
V
CC
PULSE
GENERATOR
DEVICE
UNDER
TEST
V
CC
V
I
V
O
C
L
R
L
R
T
Termination resistance R
T
should be
equal to Z
OUT
of pulse generators
Figure 1. Switching Waveforms
Figure 2. Test Circuit
4
KK74LV640
N SUFFIX PLASTIC DIP
(MS - 001AD)
Symbol
MIN
MAX
A
24.89
26.92
B
6.1
7.11
C
5.33
D
0.36
0.56
F
1.14
1.78
G
H
J
0
10
K
2.92
3.81
NOTES:
L
7.62
8.26
1.
Dimensions "A", "B" do not include mold flash or protrusions.
M
0.2
0.36
Maximum mold flash or protrusions 0.25 mm (0.010) per side.
N
0.38
D SUFFIX SOIC
(MS - 013AC)
Symbol
MIN
MAX
A
12.6
13
B
7.4
7.6
C
2.35
2.65
D
0.33
0.51
F
0.4
1.27
G
H
NOTES:
J
0
8
1.
Dimensions A and B do not include mold flash or protrusion.
K
0.1
0.3
2.
Maximum mold flash or protrusion 0.15 mm (0.006) per side
M
0.23
0.32
for A; for B 0.25 mm (0.010) per side.
P
10
10.65
R
0.25
0.75
Dimension, mm
1.27
9.53
Dimension, mm
2.54
7.62
A
B
H
C
K
C M
J
F
M
P
G
D
R x 45
SEATING
PLANE
0.25 (0.010) M T
-T-
1
20
10
11
L
H
M
J
A
B
F
G
D
SEATING
PLANE
N
K
0.25 (0.010) M T
-T-
C
1
20
10
11
5