FEATURES
High Performance
APPLICATIONS
Home Appliance
OA Equipment
Measuring Instrument
Telecommunication Equipment
ABSOLUTE MAXIMUM RATINGS
(Ta=25
)
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25
)
1/2
Parameter
Reverse Current
V
0.4
0.15
-
MAX.
V
R
=5V
100
nA
DESCRIPTION
a high sensitivity phototransistor.
Compact
High Speed Response
KPI-261D
KPI-261D combines a high-output GaAs IRED with
DIMENSIONS
The photointerrupter high-performance standard type
Unit
V
A
10
Rating
nm
-
940
I
F
=20mA
V
V
30
1.4
-
1
-
TYP.
1.2
-
-
MIN.
s
s
-
50
-
50
-
?
P
tr
tf
V
CE(SAT)
I
CEO
-
I
F
=20mA, I
C
=0.1mA
V
CC
=5V, I
C
=2mA,
R
L
=100
-
Coupled
Rise Time
Response Time
Fall Time
Collector Emitter Saturation Voltage
Dark Current
Input
Peak Wavelength
Output
Forward Voltage
V
CE
=5V, 0 Lux
Symbol
Input
Unit
75
mW
mA
V
A
5
5
Forward Current
Reverse Voltage
Pulse Forward Current
*1
Power Dissipation
0.5
50
Storage Temperature
*2
T
STG
Collector Power Dissipation
Output
Collector Emitter Voltage
Emitter Collector Voltage
V
ECO
Soldering Temperature
*3
*2. No icebound or dew
I
F
V
R
I
FP
P
C
V
CEO
P
D
20
Collector Current
-30 ~ +100
mW
T
SOL
-20 ~ +85
75
I
R
Symbol
V
F
Conditions
I
F
=20mA
*3. For MAX. 5 seconds at the position of 1mm from the package
Photointerrupter(Transmissive)
Operating Temperature
*2
T
OPR
I
C
mA
260
Widely Applicable
5
mA
Light Current
I
L
V
CE
=5V, I
F
= 20mA (Non-shading)
0.5
-
Parameter
*1. Pulse width : tw
100sec.period : T=10msec
Photointerrupter(Transmissive)
2/2
KPI-261D
0
Optical Axis(X)
Response time measurement circuit
Y
()
I =10mA
Ta=25
V =5V
4
t f
Road Resistance(R )
2
10
3
L
10
10
R
e
spon
s
e tim
e
tr,
tf
1
2
10
10
t r
3
10
F
CC
( )
+2
0
-2
(mm)
C
Ta=25
I =10mA
V = 5V
F
CC
C
Col
l
ecto
r
dar
k
curr
e
nt(I
)
50
Re
l
ativ
e
lig
h
t cur
r
ent(
I
)
Ambient temperature(Ta)
0
-20
0
0
()
60
40
20
0
10
- 1
10
100
(%)
L
2
10
1
10
F
I =20mA
C E
V =5V
(nA)
C
EO
CC
V
Input
O
p
tical
Axis
(
Y)
0
90%
Output
Method of measuring position
detection characteristic
td
tr
tf
10%
I
Input
OUT
R
L
V
C
Ambient temperature(Ta)
60
20
40
80
100 ()
V =10V
CE
Po
w
er d
i
ssipa
t
ion(
P
)
0
Ambient tempe ra ture (Ta)
0
20
80
60
40
50
C
100
()
F
o
r
w
ard c
u
r
re
n
t
(I
F
)
1.0
Forward voltage(V )
0
()
0.5
0
50
(V)
2.0
F
1.5
100
()
C
Ta=25
Re
l
ativ
e
lig
h
t cur
r
ent(
I
)
Moving distance(L)
0
+2
-2
0
50
(%) X
100
L
F
I =10 mA
C
T a=25
V = 5V
CC
Lig
h
t Cur
r
ent(
I
)
Collector-Emitter Voltage(V )
I =10 mA
I =20 mA
I =30 mA
1
0
0
4
2
2
CE
F
6
10
8
F
F
(V)
12
I =50 mA
I =40 mA
()
L
4
3
5
Ta=25
F
F
C
Forward Current(I )
0
0
20
10
(mA)
30
40
F
Lig
h
t Cur
r
ent(
I
)
3
1
2
()
4
L
C
CE
Ta=25
V =5V
Collector power dissipation Vs.
Ambient temparature
Forward current Vs.
Forward voltage
Light current Vs.
Forward current
Light current Vs.
Collentor-Emitter voltage
Relative light current Vs.
Ambient temperature
Dark current Vs.
Ambient temperature
Switching time Vs.
Load resistance
Relative light current Vs.
Moving distance
Power dissipartion( P
C
)
Forward current( I
F
)
Light Current( I
L
)
Ambient temperature(Ta)
Forward voltage( V
F
)
Forward Current( I
F
)
Light Current( I
L
)
Relative light current( I
L
)
Response time tr, tf
Relative light current( I
L
)
Collector-Emitter Voltage( V
CE
)
Ambient temperature( Ta )
Load Resistance( R
L
)
Moving distance( L )
detection characteristic
Method of measuring position
Response time measurement circuit
Optical Axis(X)
Optical Axis(Y)
Collector dark current( I
CEO
)
Ambient temperature( Ta )
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