KWAZAR-IS, DC semiconductor company Kiev Ukraine
ISO9000 sertified
Voenelectronsert (Russia ) military sertification system sertified
revised August 2005
Wafer's datasheet
EN 7805
(IL7805)
CHIP FOR THREE-TERMINAL
POSITIVE VOLTAGE REGULATOR IC
ELECTRICAL CHARACTERISTICS CHIPS ON WAFER
(Vin = 10 V, I
0
= 40 mA, Tj = +25 C, unless otherwise noted)
Symbol
Parameter
Conditions
Min
Max
Units
Accuracy
%
Vin = 20 V Tj = 25C, 5 mA IO 1A
4.85 5.15
Tj = 25C, IO = 1A
4.90 5.10
Vin = 20 V Tj = 25C, 5 mA IO 1A
4.85 5.15
V
O
Output Voltage
Vin = 35 V Tj = 25C, IO = 0 mA
4.75 5.25
V
0.1
IO = 500 mA Tj = 25C(7.5 VIN 25)
50
IO = 1.0 A Tj = 25C(7.3 VIN 20)
50
V
O
Line Regulation
IO = 1.0 A Tj = 25C(8.0 VIN 12.0)
25
mV
2.5
5 mA IO 1A
100
V
OUT
Output Voltage
Change
0.25 A IO 0.75A
50
mV
5
Vin = 10 V
6
I
Q
Quiescent Current
Vin = 38 V
10
mA
2
IO = 1.0 A (7.5 VIN 20)
0.8
IO = 0.5 A (8 VIN 25)
0.8
I
Q
Quiescent Current
Change
Vin = 10 V, 5 mA IO 1A
0.5
mA
2
I
SC
Short-Circuit Current Vin = 35 V
1.0
A
5
Physical Characteristics:
Wafer diameter
100 0.5mm
*Wafer thickness
300 20 m
Die size
1.4 x 1.9 mm
Scribe width
80 m
Passivation
PSG
* The wafer thickness shall be specified in PO
or contract
Die & pad specification
Pad
#
Pad
name
Description
Bond Pad
(m)
X
Y
1
IN
Input
230230
-610
247,5
2
GND
Ground
230230
-610
-626
3
FB
Feedback
230230
372
-560
4
OUT
Output
230230
372
247,5
Features:
- Output current excess of 100 mA
- No external components required
- Internal short circuit current limiting
- Internal thermal overload protection
Total quantity per slice d=100 mm:
Quantity of measured: 2440
Yield: 70 %
Backside covered Ti + Ni + V(7%)+Ag
Maximum input Voltage 30V
Operating junction
temperature range (Tj = 0 150 C)
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