1/11
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DCR1574SY / DCR1574SV
DCR1574SY / DCR1574SV
Phase Control Thyristor
Replaces July 2001 version, DS4400-4.0
DS4400-5.5 November 2002
PACKAGE OUTLINE
KEY PARAMETERS
V
DRM
2800V
I
T(AV)
3419A
I
TSM
54500A
dVdt
1000V/
s
dI/dt
300A/
s
See Package Details for further information.
Fig. 1 Package outline
Outline type code: Y
Outline type code: V
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1574SY28 for a 2800V 'Y' outline variant
or
DCR1574SV28 for a 2800V 'V' outline variant
If a lower voltage grade is required, then use V
DRM
/100 for the
grade required e.g.:
DCR1574SY26 for a 2600V 'Y' outline variant etc.
Note: Please use the complete part number when ordering and quote
this number in any future correspondance relating to your order.
DCR1574SY28
or
DCR1574SV28
Conditions
T
vj
= 0 to 125C.
I
DRM
= I
RRM
= 300mA.
V
DRM
, V
RRM
= 10ms 1/2 sine.
V
DSM
& V
RSM
= V
DRM
& V
RRM
+ 100V
respectively.
Lower voltage grades available.
Part Number
Repetitive Peak Voltages
V
DRM
V
RRM
V
2800
2800
2/11
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DCR1574SY / DCR1574SV
CURRENT RATINGS
T
case
= 80C unless stated otherwise
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
2667
A
-
4189
A
-
3680
A
Half wave resistive load
1680
A
-
2640
A
-
2140
A
CURRENT RATINGS
T
case
= 60C unless stated otherwise
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
3419
A
-
5370
A
-
4836
A
Half wave resistive load
2197
A
-
3451
A
-
2857
A
3/11
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DCR1574SY / DCR1574SV
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
14.85 x 10
6
A
2
s
54.5
kA
9.59 x 10
6
A
2
s
43.8
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.019
Anode dc
Clamping force 50kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.002
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
45
55
kN
55
150
o
C
-
On-state (conducting)
-
135
o
C
-
0.004
o
C/W
o
C/W
Cathode dc
-
0.019
o
C/W
Double side cooled
-
0.0095
o
C/W
4/11
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DCR1574SY / DCR1574SV
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
Max.
Units
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
DRM
to 1000A
Gate source 20V, 10
t
r
0.5
s, T
j
= 125
o
C
dV/dt
Maximum linear rate of rise of off-state voltage To 67% V
DRM
T
j
= 125
o
C.
300
mA
1000
V/
s
Repetitive 50Hz
250
A/
s
Non-repetitive
500
A/
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
0.883
V
0.11
m
2
s
V
D
= 67% V
DRM
, Gate source 30V, 15
,
t
r
0.5
s, T
j
= 25
o
C
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
Peak gate power
See figs. 7 and 8, gate characteristics table
P
G(AV)
Mean gate power
3.0
V
300
mA
0.25
V
30
V
0.25
V
5
V
30
A
150
W
10
W
Max.
Units
I
T
= 4000A, t
p
= 3ms, T
j
= 125C,
V
RM
= 200V, dI
RR
/dt = 6A/
s,
V
DR
= 67% V
DRM
, dV
DR
/dt = 20V/
s linear
s
400
Turn-off time
t
q
I
L
Latching current
T
j
= 25
o
C, V
D
= 5V
I
H
Holding current
T
j
= 25
o
C, R
g - k
=
1000
mA
300
mA
5/11
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DCR1574SY / DCR1574SV
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Maximum (limit) on-state characteristics
V
TM
Equation:
V
TM(max)
= A + BIn (I
T
) + C.I
T
+ D.
I
T
Where
A = 1.328994
B = 0.1381631
C = 3.565973 x 10
6
D = 0.01786171
These values are valid for T
j
= 125C for I
T
500A to 6000A
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Min
Max
Instantaneous on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
- (A)
Measured under pulse conditions
T
j
= 125C
0
500
1000
1500
2000
2500
3000
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
Min
Max
Instantaneous on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
- (A)
Measured under pulse conditions
T
j
= 125C
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