ChipFind - документация

Электронный компонент: DFM400PXM33

Скачать:  PDF   ZIP
1/7
www.dynexsemi.com
DFM400PXM33-A000
FEATURES
s
Low Reverse Recovery Charge
s
High Switching Speed
s
Low Forward Voltage Drop
s
Isolated Base
s
MMC Baseplate With AlN Substrates
APPLICATIONS
s
Free-wheel Circuits
s
Motor Drives
s
Resonant Converters
s
Multi-level Switch Inverters
The DFM400PXM33-A000 is a series pair 3300 volt,
fast recovery diode (FRD) module. Designed for low power
loss, the module is suitable for a variety of high voltage
applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses
make the device suitable for the latest drive designs
employing pwm and high frequency switching.
These module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DFM400PXM33-A000
Note: When ordering, please use the complete part number.
DFM400PXM33-A000
Fast Recovery Diode Module
Target Information
DS5488-1.3 November 2002
KEY PARAMETERS
V
RRM
3300V
V
F
(typ)
2.5V
I
F
(max)
400A
I
FM
(max)
800A
Fig. 1 Circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: P
(See package details for further information)
1(A2/K1)
2(K2)
3(A1)
DFM400PXM33-A000
2/7
www.dynexsemi.com
Units
V
A
A
A
2
s
kW
kV
pC
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
RRM
I
F
I
FM
I
2
t
Pmax
V
isol
Q
pd
Test Conditions
T
vj
= 125C
DC, T
case
= 70C
T
case
= 115C, t
p
= 1ms
V
R
= 0, t
p
= 10ms, T
vj
= 125C
T
case
= 25C, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 2400V, V
2
= 1800V, 50Hz RMS
Max.
3300
400
800
80
1.85
6
10
Parameter
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I
2
t value fuse current rating
Maximum power dissipation
Isolation voltage
Partial discharge
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M6
Electrical connections - M8
Parameter
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C
C
Nm
Nm
Max.
54
16
125
125
5
10
Typ.
-
-
-
-
-
-
Min.
-
-
40
-
-
-
Internal insulation:
AlN
Baseplate material:
AlSiC
Creepage distance:
20mm
Clearance:
10mm
CTI (Critical Tracking Index): 175
3/7
www.dynexsemi.com
DFM400PXM33-A000
Test Conditions
V
R
= 3300V, T
vj
= 125C
I
F
= 400A
I
F
= 400A, T
vj
= 125C
-
Parameter
Peak reverse current
Forward voltage
Inductance
STATIC ELECTRICAL CHARACTERISTICS
T
vj
= 25C unless stated otherwise.
Symbol
I
RM
V
F
L
Units
mA
V
V
nH
Max.
30
-
-
-
Typ.
-
2.5
2.5
25
Min.
-
-
-
-
Test Conditions
I
F
= 400A,
dI
F
/dt = 2800A/
s,
V
R
= 1800V
Parameter
Peak reverse recovery current
Reverse recovery charge
Reverse recovery energy
Symbol
I
rr
Q
rr
E
rec
Units
A
C
mJ
Max.
-
-
-
Typ.
400
280
300
Min.
-
-
-
DYNAMIC ELECTRICAL CHARACTERISTICS
T
vj
= 25C unless stated otherwise.
T
vj
= 125C unless stated otherwise.
Test Conditions
I
F
= 400A,
dI
F
/dt = 2000A/
s,
V
R
= 1800V
Parameter
Peak reverse recovery current
Reverse recovery charge
Reverse recovery energy
Symbol
I
rr
Q
rr
E
rec
Units
A
C
mJ
Max.
-
-
-
Typ.
430
450
550
Min.
-
-
-
DFM400PXM33-A000
4/7
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 2 Diode typical forward characteristics
Fig. 4 Transient thermal impedance
Fig. 5 Power dissipation
Fig. 6DC current rating vs case temperature
0
100
200
300
400
500
600
700
800
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Forward voltage, V
F
- (V)
Forward current, I
F
- (A)
T
j
= 25C
T
j
= 125C
200
400
600
800
1000
1200
1400
1600
1800
2000
0
25
50
75
100
125
150
Case temperature, T
case
- (C)
Power Dissipation - P
tot
(W)
0
100
200
300
400
500
600
700
0
25
50
75
100
125
150
Case temperature, T
case
- (C)
DC forward current, I
F
- (A)
1
10
100
0.001
0.01
1
0.1
10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (

C/kW )
R
i
(C/KW)
i
(ms)
1
1.4773
0.0843
2
7.823
3.7205
3
11.1257
33.2138
4
33.6616
236.5275
5/7
www.dynexsemi.com
DFM400PXM33-A000
Fig. 7 RBSOA
0
200
100
400
600
300
500
700
0
500
1000
1500
2000
2500
3000
3500
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
T
j
= 125C