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FEATURES
Low Reverse Recovery Charge
High Switching Speed
Low Forward Voltage Drop
Isolated MMC Base plate With AIN Substrates
Dual Diodes Can Be Paralleled for 800A Rating
APPLICATIONS
Chopper Diodes
Boost and Buck Converters
Free-wheel Circuits
Snubber Circuits
Resonant Converters
Induction Heating
Multi-level Switch Inverters
The DFM400XXM65-K000 is a dual 6500 volt, fast
recovery diode (FRD) module. Designed for low
power loss, the module is suitable for a variety of
high voltage applications in motor drives and power
conversion.
Fast switching times and low reverse recovery
losses allow high frequency operation making the
device suitable for the latest drive designs
employing pwm and high frequency switching.
These modules incorporate electrically isolated base
plates and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DFM400XXM65-K000
Note: When ordering, please use the complete part
number.
.
KEY PARAMETERS
V
RRM
6500V
V
F
(typ)
3.6V
I
F
(max)
400A
I
FM
(max)
800A
Fig. 1 Circuit diagram
Outline type code: X
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
DFM400XXM65-K000
Fast Recovery Diode Module
DS5806-1.0 November 2004 (LN23657)
SEMICONDUCTOR
DFM400XXM65-K000
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ABSOLUTE MAXIMUM RATINGS PER ARM
Stresses above those listed under `Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
T
case
= 25 C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
V
RRM
Repetitive peak reverse voltage
T
vj
= 125 C
T
vj
=25 C
T
vj
= -40 C
6500
6300
5800
V
I
F
Forward current (per arm)
DC, T
case
= 75 C
400
A
I
FM
Max. forward current
T
case
= 115 C, t
p
= 1ms
800
A
I
2
t
I
2
t value fuse current rating
V
R
= 0, t
p
= 10ms, T
vj
= 125 C
97
kA
2
s
Pmax
Maximum power dissipation
T
case
= 25 C, T
vj
= 125 C
3300
W
I
isol
Isolation voltage
Commoned terminals to base plate, AC RMS, 1 min, 50Hz
10.2
kV
Q
pd
Partial discharge
IEC1287. V
1
= 7000V, V
2
= 5100V, 50Hz RMS
10
pC
THERMAL AND MECHANICAL RATINGS
Internal insulation:
AIN
Baseplate material:
AISiC
Creepage distance:
56mm
Clearance:
26mm
CTI (Critical Tracking Index):
>600
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
Thermal resistance diode (per arm)
Continuous dissipation
junction to case
-
-
30
C/kW
R
th(c-h)
Thermal resistance case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
-
-
8
C/kW
T
j
Junction temperature
-
-40
-
125
C
T
stg
Storage temperature range
-
-40
-
125
C
-
Screw torque
Mounting M6
-
-
5
Nm
Electrical connections M8
-
-
10
Nm
SEMICONDUCTOR
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STATIC ELECTRICAL CHARACTERISTICS PER ARM
T
vj
= 25 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
I
RM
Peak reverse current
V
R
= 3600V, T
vj
= 125 C
-
-
40
mA
V
F
Forward voltage
I
F
= 400A
-
3.6
V
I
F
= 400A, T
vj
= 125 C
-
4.1
V
L
Inductance (per arm)
-
-
40
-
nH
STATIC ELECTRICAL CHARACTERISTICS
T
vj
= 25 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
L
M
Module inductance
-
-
20
-
nH
R
INT
Internal resistance (per arm)
0.37
m
DYNAMIC ELECTRICAL CHARACTERISTICS PER ARM
T
vj
= 25 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
I
rr
Peak reverse recovery current
I
F
= 400V,
-
300
-
A
Q
rr
Reverse recovery charge
dI
F
/dt = 1300A/s,
-
700
-
C
E
rec
Reverse recovery energy
V
R
= 3600V
-
1300
-
mJ
T
vj
= 125 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
I
rr
Peak reverse recovery current
I
F
= 400A,
-
370
-
A
Q
rr
Reverse recovery charge
dI
F
/dt = 1600A/s
-
1000
-
C
E
rec
Reverse recovery energy
V
R
= 3600V
-
2000
-
mJ
SEMICONDUCTOR
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1
10
100
0.001
0.01
0.1
1
10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th(j-c)
- (C/kW)
0
200
400
600
800
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward voltage - (V)
Current - (A)
25C
125C
1
2
3
4
Ri (C/kW)
1.13
5.27
9.1
14.64
ti (ms)
0.17
8.08
51.92
280.5
Fig.3 Diode typical forward characteristics
Fig.4 Transient thermal impedance
0
500
1000
1500
2000
2500
3000
3500
0
50
100
150
Case Temperature, T
case
(C)
Power dissipation, P
tot
- (W)
0
50
100
150
200
250
300
350
400
450
0
50
100
150
Case Temperature, T
case
-
(
C)
DC Forward Current, I
F
- (A)
Fig.5 Power dissipation
Fig.6 6DC current rating vs case temperature
SEMICONDUCTOR
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0
100
200
300
400
500
600
700
800
900
0
1000
2000
3000
4000
5000
6000
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
Fig.7 RBSOA
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