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DFM800NXM33-A000
FEATURES
s
Low Reverse Recovery Charge
s
High Switching Speed
s
Low Forward Voltage Drop
s
Isolated Base
s
Dual Diodes Can Be Paralleled for 1600A Rating
s
MMC Baseplate With AlN Substrates
APPLICATIONS
s
Brake Chopper Diode
s
Boost and Buck Converters
s
Free-wheel Circuits
s
Motor Drives
s
Resonant Converters
s
Induction Heating
s
Multi-level Switch Inverters
The DFM800NXM33-A000 is a dual 3300 volt, fast
recovery diode (FRD) module. Designed for low power
loss, the module is suitable for a variety of high voltage
applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses
allow high frequency operation making the device suitable
for the latest drive designs employing pwm and high
frequency switching.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
ORDERING INFORMATION
Order As:
DFM800NXM33-A000
Note: When ordering, please use the complete part number.
DFM800NXM33-A000
Fast Recovery Diode Module
Preliminary Information
DS5473-1.3 October 2001
KEY PARAMETERS
V
RRM
3300V
V
F
(typ)
2.5V
I
F
(max)
800A
I
FM
(max)
1600A
Fig. 1 Circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: N
(See package details for further information)
External connection for single 1600A diode application
C2(K2)
C1(K1)
E1(A1)
E2(A2)
External connection
External connection
C1
E1
C2
E2
DFM800NXM33-A000
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Units
V
A
A
kA
2
s
W
kV
pC
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
RRM
I
F
I
FM
I
2
t
Pmax
V
isol
Q
pd
Test Conditions
T
vj
= 125C
DC, T
case
= 70C
T
case
= 115C, t
p
= 1ms
V
R
= 0, t
p
= 10ms, T
vj
= 125C
T
case
= 25C, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 2450V, V
2
= 1800V, 50Hz RMS
Max.
3300
800
1600
320
3845
6
10
Parameter
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I
2
t value fuse current rating
Maximum power dissipation
Isolation voltage
Partial discharge
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M6
Electrical connections - M8
Parameter
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C
C
Nm
Nm
Max.
26
6
125
125
5
10
Typ.
-
-
-
-
-
-
Min.
-
-
40
-
-
-
Internal insulation:
AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Critical Tracking Index): 175
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DFM800NXM33-A000
Test Conditions
V
R
= 3300V, T
vj
= 125C
I
F
= 800A
I
F
= 800A, T
vj
= 125C
-
Parameter
Peak reverse current
Forward voltage
Inductance
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
T
vj
= 25C unless stated otherwise.
Symbol
I
RM
V
F
L
Units
mA
V
V
nH
Max.
60
-
-
-
Typ.
-
2.5
2.5
25
Min.
-
-
-
-
Test Conditions
I
F
= 800A,
dI
F
/dt = 4400A/
s,
V
R
= 1800V
Parameter
Peak reverse recovery current
Reverse recovery charge
Reverse recovery energy
Symbol
I
rr
Q
rr
E
rec
Units
A
C
mJ
Max.
-
-
-
Typ.
650
450
500
Min.
-
-
-
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
T
vj
= 25C unless stated otherwise.
T
vj
= 125C unless stated otherwise.
Test Conditions
I
F
= 800A,
dI
F
/dt = 3000A/
s,
V
R
= 1800V
Parameter
Peak reverse recovery current
Reverse recovery charge
Reverse recovery energy
Symbol
I
rr
Q
rr
E
rec
Units
A
C
mJ
Max.
-
-
-
Typ.
670
670
850
Min.
-
-
-
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TYPICAL CHARACTERISTICS
Fig. 2 Diode typical forward characteristics
Fig. 4 Transient thermal impedance
Fig. 5 Power dissipation
Fig. 6DC current rating vs case temperature
0
200
400
600
800
1000
1200
1400
1600
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Forward voltage, V
F
- (V)
Forward current, I
F
- (A)
T
j
= 25C
T
j
= 125C
0.1
1
10
100
0.001
0.01
1
0.1
10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (
C/kW )
Diode R
i
(C/KW)
i
(ms)
1
0.7386
0.0843
2
3.9115
3.7205
3
5.5628
33.2138
4
16.8308
236.5275
Diode
400
800
1200
1600
2000
2400
2800
3200
3600
4000
0
25
50
75
100
125
150
Case temperature, T
case
- (C)
Power Dissipation - P
tot
(W)
0
200
400
600
800
1000
1200
1400
0
25
50
75
100
125
150
Case temperature, T
case
- (C)
DC forward current, I
F
- (A)
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DFM800NXM33-A000
Fig. 7 RBSOA
0
400
200
800
1200
600
1000
1400
0
500
1000
1500
2000
2500
3000
3500
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
T
j
= 125C
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