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DFM900FXM18-A000
FEATURES
s
Low Reverse Recovery Charge
s
High Switching Speed
s
Low Forward Voltage Drop
s
Isolated Base
s
Dual Diodes Can Be Paralleled for 1800A Rating
s
MMC Baseplate With AlN Substrates
APPLICATIONS
s
Brake Chopper Diode
s
Boost and Buck Converters
s
Free-wheel Circuits
s
Motor Drives
s
Resonant Converters
s
Induction Heating
s
Multi-level Switch Inverters
The DFM900FXM18-A000 is a dual 1800 volt, fast
recovery diode (FRD) module. Designed for low power
loss, the module is suitable for a variety of high voltage
applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses
allow high frequency operation making the device suitable
for the latest drive designs employing pwm and high
frequency switching.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.
ORDERING INFORMATION
Order As:
DFM900FXM18-A000
Note: When ordering, please use the complete part number.
DFM900FXM18-A000
Fast Recovery Diode Module
Preliminary Information
DS5441-1.3 April 2001
KEY PARAMETERS
V
RRM
1800V
V
F
(typ)
2.0V
I
F
(max)
900A
I
FM
(max)
1800A
Fig. 1 Circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: F
(See package details for further information)
External connection for single 1800A diode application
2(C2)
1(C1)
3(A1)
4(A2)
External connection
External connection
1
3
2
4
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Units
V
A
A
kA
2
s
W
kV
pC
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
RRM
I
F
I
FM
I
2
t
Pmax
V
isol
Q
pd
Test Conditions
T
vj
= 125C
DC, T
case
= 75C, T
vj
= 125C
T
case
= 110C, t
p
= 1ms
V
R
= 0, t
p
= 10ms, T
vj
= 125C
T
case
= 25C, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1500V, V
2
= 1100V, 50Hz RMS
Max.
1800
900
1800
270
3700
4
10
Parameter
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I
2
t value fuse current rating
Maximum power dissipation
Isolation voltage
Partial discharge
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M6
Electrical connections - M8
Parameter
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C
C
Nm
Nm
Max.
27
8
125
125
5
10
Typ.
-
-
-
-
-
-
Min.
-
-
-
40
-
-
Internal insulation:
AlN
Baseplate material:
AlSiC
Creepage distance:
20mm
Clearance:
10mm
CTI (Critical Tracking Index): 175
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DFM900FXM18-A000
Test Conditions
I
F
= 900A,
dI
F
/dt = 6000A/
s,
V
R
= 900V
Parameter
Peak reverse recovery current
Reverse recovery charge
Reverse recovery energy
Symbol
I
rr
Q
rr
E
rec
Units
A
C
mJ
Max.
-
-
-
Typ.
660
240
180
Min.
-
-
-
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
T
vj
= 25C unless stated otherwise.
T
vj
= 125C unless stated otherwise.
Test Conditions
I
F
= 900A,
dI
F
/dt = 6000A/
s,
V
R
= 900V
Parameter
Peak reverse recovery current
Reverse recovery charge
Reverse recovery energy
Symbol
I
rr
Q
rr
E
rec
Units
A
C
mJ
Max.
-
-
-
Typ.
765
410
270
Min.
-
-
-
Test Conditions
V
R
= 1800V, T
vj
= 125C
I
F
= 900A
I
F
= 900A, T
vj
= 125C
-
Parameter
Peak reverse current
Forward voltage
Inductance
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
T
vj
= 25C unless stated otherwise.
Symbol
I
RM
V
F
L
Units
mA
V
V
nH
Max.
15
2.3
2.3
-
Typ.
-
2.0
2.0
20
Min.
-
-
-
-
STATIC ELECTRICAL CHARACTERISTICS
T
vj
= 25C unless stated otherwise.
Test Conditions
-
Parameter
Module inductance
(externally connected in parallel)
Symbol
L
M
Units
nH
Max.
-
Typ.
15
Min.
-
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TYPICAL CHARACTERISTICS
Fig. 2 Diode typical forward characteristics
Fig. 4 Transient thermal impedance
Fig. 5 Power dissipation
Fig. 6DC current rating vs case temperature
0
300
600
900
1200
1500
1800
2100
2400
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Foward voltage, V
F
- (V)
Foward current, I
F
- (A)
T
j
= 125C
T
j
= 25C
1
10
100
0.001
0.01
1
0.1
10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (
C/kW )
R
i
(C/KW)
i
(ms)
1
1.081
0.0066332
2
3.7409
1.4384
3
4.7184
12.8758
4
17.5092
110.2138
0
1000
2000
3000
4000
0
20
40
60
80
100
120
140
160
Case temperature, T
case
- (C)
Power dissipation, P
tot
- (W)
0
200
400
600
800
1000
1200
1300
100
300
500
700
900
1100
0
20
40
60
80
100
120
140
160
Case temperature, T
case
- (C)
DC forward current, I
F
- (A)
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DFM900FXM18-A000
Fig. 7 RBSOA
0
200
400
600
800
1000
1200
0
400
800
1200
1600
2000
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
T
j
= 125C
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