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Электронный компонент: DGT305RE

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DGT305RE
1/13
www.dynexsemi.com
FEATURES
s
Double Side Cooling
s
Reverse Blocking Capability
s
High Reliability In Service
s
High Voltage Capability
s
Fault Protection Without Fuses
s
High Surge Current Capability
s
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
APPLICATIONS
s
Variable speed A.C. motor drive inverters (VSD-AC)
s
Uninterruptable Power Supplies
s
High Voltage Converters
s
Choppers
s
Welding
s
Induction Heating
s
DC/DC Converters
KEY PARAMETERS
I
TCM
700A
V
DRM
1800V
I
T(AV)
240A
dV
D
/dt
500V/
s
di
T
/dt
500A/
s
VOLTAGE RATINGS
1800
DGT305SE18
Conditions
Type Number
T
vj
= 125
o
C, I
DM
= 50mA,
I
RRM
= 50mA, V
RG
= 2V
Repetitive Peak Off-state Voltage
V
DRM
V
Repetitive Peak Reverse Voltage
V
RRM
V
1800
DGT305RE
Reverse Blocking Gate Turn-off Thyristor
DS5519-2.0 February 2002
Fig. 1 Package outline
Outline type code: E
(See Package Details for further information)
DGT305RE
2/13
www.dynexsemi.com
Conditions
4.0
80000
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
di
T
/dt
Critical rate of rise of on-state current
500
500
V/
s
Max.
Units
Rate of rise of off-state voltage
dV
D
/dt
I
TSM
Symbol
Parameter
I
2
t
V
D
= 67% V
DRM
, I
T
= 700A, T
j
= 125
o
C, I
FG
> 20A,
Rise time < 1.0
s
A/
s
To 80% V
DRM
; R
GK
1.5
, T
j
= 125
o
C
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
10
Min.
-
-
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
6
50
-
20
10
-
-
s
40
50
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
s
A/
s
kW
W
A
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
I
TCM
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
V
D
= 67%V
DRM
, T
j
= 125
o
C, di
GQ
/dt =15A/
s, Cs = 1.5
F
RMS on-state current
A
A
A
700
240
373
Units
Repetitive peak controllable on-state current
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
I
T(RMS)
I
T(AV)
Mean on-state current
400
V
Peak forward transient voltage during current
fall time
V
DP
V
D
= 67% V
DRM
, I
T
= 700A, T
j
= 125
o
C,
di
GQ
/dt =15A/
s, Cs = 1.5
F
SURGE RATINGS
DGT305RE
3/13
www.dynexsemi.com
CHARACTERISTICS
THERMAL RATINGS
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.20
-
0.018
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.075
o
C/W
Anode side cooled
o
C/W
0.12
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-
125
6.0
5.0
40
kN
o
C/W
Clamping force 5.5kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
o
C
o
C
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
-
900
V
RGM
= 16V, No gate/cathode resistor
C
I
T
=600A, V
D
= 1200V,
Snubber Cap Cs = 1.5
F,
di
GQ
/dt = 15A/
s
R
L
= (Residual inductance 2.75
H)
T
j
= 125
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
Min.
Max.
Units
-
2.5
V
At = V
DRM
, V
RG
= 2V
-
50
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
0.75
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.2
A
mA
mJ
160
-
V
D
= 1200V, I
T
= 600A,
I
FG
= 20A, rise time < 1.0
s
R
L
= (Residual inductance 2.75
H)
s
1.1
-
-
2.5
s
-
550
mJ
-
30
s
s
12
-
s
13.5
-
-
1800
C
At 600A peak, I
G(ON)
= 2A d.c.
DGT305RE
4/13
www.dynexsemi.com
CURVES
Fig.2 Gate characteristics
Fig.4 Dependence of I
TCM
on C
S
Fig.3 Maximum (limit) on-state characteristics
Fig.5 Maximum (limit) transient thermal resistance
DGT305RE
5/13
www.dynexsemi.com
Fig.6 Surge (non-repetitive) on-state current vs time
Fig.7 Steady state rectangulerwave conduction loss - double side cooled