Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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FEATURES
10s Short Circuit Withstand
Soft Punch Through Silicon
Isolated MMC Base with AIN Substrates
Lead Free construction
High Thermal Cycling Capability
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 3600A.
The DIM1200ESM33-F000 is a single switch 3300V
soft punch through, n channel enhancement mode,
insulated gate bipolar transistor (IGBT) module. The
IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10
s short circuit withstand. This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1200ESM33-F000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
3300V
V
CE (sat)
*
(typ)
2.8V
I
C
(max)
1200A
I
C(PK)
(max)
2400A
*
(measured at the auxiliary terminals)
Fig. 1 Single switch circuit diagram
Outline type code: E
(See package details for further information)
Fig. 2 Package
DS5831-1.0 JULY. 2005 (LN23824)
DIM1200ESM33-F000
Single Switch IGBT
Module
SEMICONDUCTOR
DIM1200ESM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under `Absolute Maximum Ratings' may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25 C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
V
CES
Collector-emitter voltage
V
GE
= 0V, T
j
= -25 C
3300
V
V
GES
Gate-emitter voltage
20
V
I
C
Continuous collector current
T
case
= 90 C
1200
A
I
C(PK)
Peak collector current
1ms, T
case
=115 C
2400
A
P
max
Max. transistor power dissipation
T
case
= 25 C, T
j
= 150 C
15.6
kW
I
2
t
Diode I
2
t value (IGBT arm)
V
R
= 0, t
P
= 10ms, T
vj
= 125 C
720
kA
2
S
V
isol
Isolation voltage per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
6000
V
Q
PD
Partial discharge - per module
IEC1287. V
1
= 3500V, V
2
= 2600V, 50Hz RSM
10
pC
SEMICONDUCTOR
DIM1200ESM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AIN
Baseplate material:
AlSiC
Creepage distance:
29mm
Clearance:
20mm
CTI (Critical Tracking Index):
175
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
Thermal resistance transistor (per
switch)
Continuous dissipation
junction to case
-
-
8
C/kW
R
th(j-c)
Thermal resistance diode (per
switch)
Continuous dissipation
junction to case
-
-
16
C/kW
R
th(c-h)
Thermal resistance case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
-
-
6
C/kW
T
j
Junction temperature
Transistor
-
-
150
C
Diode
-
-
125
C
T
stg
Storage temperature range
-
-40
-
125
C
-
Screw torque
Mounting M6
-
-
5
Nm
Electrical connections M4
-
-
2
Nm
Electrical connections M8
-
-
10
Nm
SEMICONDUCTOR
DIM1200ESM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ELECTRICAL CHARACTERISTICS
T
case
= 25 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
I
CES
Collector cut-off current
V
GE
= 0V, V
CE
= V
CES
-
-
5
mA
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125 C
-
-
90
mA
I
GES
Gate leakage current
V
GE
= 20V, V
CE
= 0V
-
-
1
A
V
GE(TH)
Gate threshold voltage
I
C
= 120mA, V
GE
= V
CE
5.5
6.5
7.0
V
V
CE(sat)
Collector-emitter saturation voltage
V
GE
= 15V, I
C
= 1200A
-
2.8
-
V
V
GE
= 15V, I
C
= 1200A, T
case
= 125 C
-
3.6
-
V
I
F
Diode forward current
DC
-
1200
-
A
I
FM
Diode maximum forward current
t
p
= 1ms
-
2400
-
A
V
F
Diode forward voltage
I
F
= 1200A
-
2.9
-
V
I
F
= 1200A, T
case
= 125 C
-
3.0
-
V
C
ies
Input capacitance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
216
-
nF
C
res
Reverse transfer capacitance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
3.3
nF
L
M
Module inductance per arm
-
-
10
-
nH
R
INT
Internal resistance per arm
-
-
0.09
-
m
SC
Data
Short circuit. I
sc
T
j
= 125 C, V
cc
= 2500V,
I
1
-
6000
-
A
t
p
10s,
V
CE(max)
= V
CES
- L*.di/dt
I
2
-
5500
-
A
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals
*
L is the circuit inductance + L
M
SEMICONDUCTOR
DIM1200ESM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ELECTRICAL CHARACTERISTICS
T
case
= 25 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
t
d(off)
Turn-off delay time
I
C
= 1200A
-
2150
-
ns
t
f
Fall time
V
GE
= 15V
-
230
-
ns
E
OFF
Turn-off energy loss
V
CE
= 1800V
-
1550
-
mJ
t
d(on)
Turn-on delay time
R
G(ON)
= R
G(OFF)
= 2.7
-
1300
-
ns
t
r
Rise time
C
ge
= 330nF
-
275
-
ns
Q
g
Gate charge
L
100nH
-
30
-
C
E
ON
Turn-on energy loss
I
C
= 1200A, V
GE
= 15V,
V
CE
= 1800V,R
G
= 1.65
,
C
ge
= 330nF,
L~ 100nH
-
1850
-
mJ
Q
rr
Diode reverse recovery charge
I
F
= 2400A, V
R
= 1800V,
-
480
-
C
I
rr
Diode reverse current
dl
F
/dt = 6000A/s
-
1000
-
A
E
REC
Diode reverse recovery energy
-
450
-
mJ
T
case
= 125 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
t
d(off)
Turn-off delay time
I
C
= 1200A
-
2200
-
ns
t
f
Fall time
V
GE
= 15V
-
240
-
ns
E
OFF
Turn-off energy loss
V
CE
= 1800V
-
1800
-
mJ
t
d(on)
Turn-on delay time
R
G(ON)
= R
G(OFF)
= 2.7
-
1200
-
ns
t
r
Rise time
C
ge
= 330nF, L
50nH
-
315
-
ns
E
ON
Turn-on energy loss
I
C
= 1200A, V
GE
= 15V,
V
CE
= 1800V,R
G
= 1.65
,
C
ge
= 330nF,
L~ 100nH
-
2600
-
mJ
Q
rr
Diode reverse recovery charge
I
F
= 1200A, V
R
= 1800V,
-
900
-
C
I
rr
Diode reverse current
dl
F
/dt = 6000A/s
-
1200
-
A
E
REC
Diode reverse recovery energy
-
900
-
mJ
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