DIM200PLM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/6
www.dynexsemi.com
FEATURES
I
10
s Short Circuit Withstand
I
High Thermal Cycling Capability
I
Non Punch Through Silicon
I
Isolated MMC Base with AlN Substrates
APPLICATIONS
I
Choppers
I
Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200PLM33-A000 is a 3300V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module configured with the lower arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10
s short circuit withstand. This device
is optimised for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200PLM33-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
3300V
V
CE(sat)
*
(typ)
3.2V
I
C
(max)
200A
I
C(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
DIM200PLM33-A000
IGBT Chopper Module
Preliminary Information
Replaces issue April 2003, version DS5597-1.1
DS5597-2.0 May 2003
Fig. 1 Chopper circuit diagram - lower arm control
Fig. 2 Electrical connections - (not to scale)
Outline type code: P
(See package details for further information)
3(E2)
2(K)
1(A/C2)
7(E
2)
6(G
2)
8(C
2)
DIM200PLM33-A000
2/6
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Critical Tracking Index): 175
Test Conditions
V
GE
= 0V
-
T
case
= 85C
1ms, T
case
= 115C
T
case
= 25C, T
j
= 150C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 2450V, V
2
= 1800V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Q
PD
Units
V
V
A
A
W
V
pC
Max.
3300
20
200
400
2608
6000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Isolation voltage - per module
Partial discharge - per module
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M5
Parameter
Thermal resistance - transistor (IGBT arm)
Thermal resistance - diode (IGBT arm)
Thermal resistance - diode (diode arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Max.
48
96
96
16
150
125
125
5
4
Typ.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
-
40
-
-
DIM200PLM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/6
www.dynexsemi.com
Note:
Measured at the power busbars and not the auxiliary terminals)
L* is the circuit inductance + L
M
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
=20mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 200A
V
GE
= 15V, I
C
= 200A, , T
case
= 125C
DC
DC
t
p
= 1ms
t
p
= 1ms
I
F
= 200A (IGBT arm)
I
F
= 200A (Diode arm)
I
F
= 200A, T
case
= 125C (IGBT arm)
I
F
= 200A, T
case
= 125C (diode arm)
V
CE
= 25V, V
GE
= 0V, f = 1MHz
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 2500V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
(IGBT arm)
Gate leakage current (IGBT arm)
Gate threshold voltage (IGBT arm)
Collector-emitter saturation voltage
(IGBT arm)
Diode forward current (IGBT arm)
Diode forward current (diode arm)
Diode maximum forward current
(IGBT arm)
Diode maximum forward current
(diode arm)
Diode forward voltage
Input capacitance (IGBT arm)
Reverse transfer capacitance (IGBT arm)
Module inductance - per switch
Internal transistor resistance (IGBT arm)
Short circuit. I
SC
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
C
res
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
A
A
A
A
V
V
V
V
nF
nF
nH
m
A
A
Max.
1
15
2
6.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
3.2
4.0
200
200
400
400
2.5
2.5
2.5
2.5
45
2.5
30
0.54
1300
1100
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DIM200PLM33-A000
4/6
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
=10
C
ge
= 33nF
L ~ 100nH
I
F
= 200A, V
R
= 1800V,
dI
F
/dt = 1100A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS - IGBT ARM
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1600
250
240
640
300
420
190
185
220
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
=10
C
ge
= 33nF
L ~ 100nH
I
F
= 200A, V
R
= 1800V,
dI
F
/dt = 1000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Typ.
1300
200
170
640
250
290
6
115
165
130
DIM200PLM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/6
www.dynexsemi.com
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 750g
Module outline type code: P
PDF 
ZIP