DIM200WKS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
www.dynexsemi.com
Replaces February 2004 version, issue PDS5969-2.0
DS5969-3.0 June 2004
FEATURES
I
10
s Short Circuit Withstand
I
Non Punch Through Silicon
I
Isolated Copper Baseplate
APPLICATIONS
I
Choppers
I
Motor Controllers
I
Induction Heating
I
Resonant Converters
I
Power Supplies
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200WKS12-A000 is a 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module configured with the upper arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10
s short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200WKS12-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
1200V
V
CE(sat)
*
(typ)
2.2V
I
C
(max)
200A
I
C(PK)
(max)
400A
*(Measured at the power busbars and not the auxiliary terminals)
DIM200WKS12-A000
IGBT Chopper Module - Upper Arm Control
Fig. 1 Chopper circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: W
(See package details for further information)
3(C1)
1(K,E)
2(A)
5(E
1
)
4(G
1
)
DIM200WKS12-A000
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M6
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
(Antiparallel and freewheel diode)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al
2
O
3
Clearance: 13mm
Baseplate material: Cu
CTI (Critical Tracking Index): 175
Creepage distance: 24mm
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Max.
90
194
15
150
125
125
5
5
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
3
2.5
Test Conditions
V
GE
= 0V
-
T
case
= 80C
1ms, T
case
= 115C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1300V, V
2
= 1000V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Units
V
V
A
A
W
kA
2
s
V
PC
Max.
1200
20
200
400
1390
6.25
2500
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Partial discharge - per module
DIM200WKS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/8
www.dynexsemi.com
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 10mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 200A
V
GE
= 15V, I
C
= 200A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 200A
I
F
= 200A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 900V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
(IGBT and Diode arm)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
(IGBT and Diode arm)
Input capacitance
Module inductance - per arm
Internal transistor resistance
Short circuit. I
SC
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
m
A
A
Max.
0.25
6
1
6.5
2.7
3.1
200
400
2.5
2.6
-
-
-
-
-
Typ.
-
-
-
5.5
2.2
2.6
-
-
2.2
2.3
33
20
0.23
1375
1125
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
Note:
Measured at the power busbars and not the auxiliary terminals)
L* is the circuit inductance + L
M
DIM200WKS12-A000
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
600
50
20
240
95
25
2
30
150
13
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 70nH
I
F
= 200A, V
R
= 600V,
dI
F
/dt = 2300A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS - IGBT ARM
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
800
70
27
385
110
40
50
160
20
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 70nH
I
F
= 200A, V
R
= 600V,
dI
F
/dt = 2000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
DIM200WKS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/8
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
5
10
15
20
25
30
35
40
45
0
50
100
150
200
Collector current, I
C
- (A)
Switching energy, E
sw
- (mJ)
E
on
E
off
E
rec
T
c
= 125C,
V
cc
= 600V,
R
g
= 4.7 Ohms
0
5
10
15
20
25
30
35
40
45
50
55
4
10
12
Gate resistance, R
g
- (Ohms)
Switching energy, E
sw
- (mJ)
8
6
E
on
E
off
E
rec
T
c
= 125C,
V
cc
= 600V,
I
C
= 200A
0
50
100
150
200
250
300
350
400
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 25C
V
ce
is measured at power busbars
and not the auxiliary terminals
0
50
100
150
200
250
300
350
400
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 125C
V
ce
is measured at power busbars
and not the auxiliary terminals
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