Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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FEATURES
10s Short Circuit Withstand
Non Punch Through Silicon
Isolated Copper Baseplate
Lead Free construction
APPLICATIONS
High Power Inverters
Motor Controllers
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM400DDS17-A000 is a dual switch 1700V, n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10
s short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400DDS17-A000
Note: When ordering, please use the whole part number.
.
KEY PARAMETERS
V
CES
1700V
V
CE (sat)
*
(typ)
2.7V
I
C
(max)
400A
I
C(PK)
(max)
800A
*
(measured at the power busbars and not the auxiliary terminals)
Fig. 1 Dual switch circuit diagram
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
DIM400DDS17-A000
Dual Switch IGBT
Module
DS5859-1.0 June 2005 (LN24024)
SEMICONDUCTOR
DIM400DDS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ABSOLUTE MAXIMUM RATINGS PER ARM
Stresses above those listed under `Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25 C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
V
CES
Collector-emitter voltage
V
GE
= 0V
1700
V
V
GES
Gate-emitter voltage
20
V
I
C
Continuous collector current
T
case
= 75 C
400
A
I
C(PK)
Peak collector current
1ms, T
case
=110 C
800
A
P
max
Max. transistor power dissipation
T
case
= 25 C, T
j
= 150 C
3470
W
I
2
t
Diode I
2
t value
V
R
= 0, t
P
= 10ms, T
vj
= 125 C
30
kA
2
S
V
isol
Isolation voltage per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
4000
V
SEMICONDUCTOR
DIM400DDS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Al
2
O
3
Baseplate material:
Copper
Creepage distance:
20mm
Clearance:
10mm
CTI (Critical Tracking Index):
175
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
Thermal resistance transistor
(per arm)
Continuous dissipation
junction to case
-
-
36
C/kW
R
th(j-c)
Thermal resistance diode (per arm)
Continuous dissipation
junction to case
-
-
80
C/kW
R
th(c-h)
Thermal resistance case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
-
-
8
C/kW
T
j
Junction temperature
Transistor
-
-
150
C
Diode
-
-
125
C
T
stg
Storage temperature range
-
-40
-
125
C
-
Screw torque
Mounting M6
-
-
5
Nm
Electrical connections M4
-
-
2
Nm
Electrical connections M8
-
-
10
Nm
SEMICONDUCTOR
DIM400DDS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ELECTRICAL CHARACTERISTICS
T
case
= 25 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
I
ces
Collector cut-off current
V
GE
= OV, V
CE
= V
CES
-
-
1
mA
V
GE
= OV, V
CE
= V
CES
, T
case
= 125 C
-
-
12
mA
I
ces
Gate leakage current
V
GE
= 20V, V
CE
= 0V
-
-
2
A
V
GE(TH)
Gate threshold voltage
I
C
= 20mA, V
GE
= V
CE
4.5
5.5
6.5
V
V
CE(sat)
Collector-emitter saturation voltage
V
GE
= 15V, I
C
= 400A
-
2.7
3.2
V
V
GE
= 15V, I
C
= 400A, T
case
= 125 C
-
3.4
4.0
V
I
F
Diode forward current
DC
-
-
400
A
I
FM
Diode maximum forward current
t
p
= 1ms
-
-
800
A
V
F
Diode forward voltage
I
F
= 400A
-
2.2
2.5
V
I
F
= 400A, T
case
= 125 C
-
2.3
2.6
V
C
ies
Input capacitance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
30
-
nF
L
M
Module inductance per arm
-
-
20
-
nH
R
INT
Internal resistance per arm
-
-
0.27
-
m
SC
Data
Short circuit. I
sc
T
j
= 125 C, V
cc
= 900V,
I
1
-
1850
-
A
t
p
10s,
V
CE(max)
= V
CES
- L*di/dt
I
2
-
1600
-
A
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals
*
L is the circuit inductance + L
M
SEMICONDUCTOR
DIM400DDS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ELECTRICAL CHARACTERISTICS
T
case
= 25 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
t
d(off)
Turn-off delay time
I
C
= 400A
-
1150
-
ns
t
f
Fall time
V
GE
= 15V
-
100
-
ns
E
OFF
Turn-off energy loss
V
CE
= 900V
-
120
-
mJ
t
d(on)
Turn-on delay time
R
G(ON)
= R
G(OFF)
= 4.7
-
250
-
ns
t
r
Rise time
L
100nH
-
250
-
ns
E
O
Turn-on energy loss
-
150
-
mJ
Q
g
Gate charge
-
4.5
-
C
Q
rr
Diode reverse recovery charge
I
F
= 400A, V
R
= 900 V
-
100
-
C
I
rr
Diode reverse current
dl
F
/dt = 3000A/s
-
230
-
A
E
REC
Diode reverse recovery energy
-
70
-
mJ
T
case
= 125 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
t
d(off)
Turn-off delay time
I
C
= 400A
-
1400
-
ns
t
f
Fall time
V
GE
= 15V
-
130
-
ns
E
OFF
Turn-off energy loss
V
CE
= 900V
-
180
-
mJ
t
d(on)
Turn-on delay time
R
G(ON)
= R
G(OFF)
= 4.7
-
400
-
ns
t
r
Rise time
L
100nH
-
250
-
ns
E
ON
Turn-on energy loss
-
170
-
mJ
Q
rr
Diode reverse recovery charge
I
F
= 400A, V
R
= 900 V
-
170
-
C
I
rr
Diode reverse current
dl
F
/dt = 2500A/s
-
270
-
A
E
REC
Diode reverse recovery energy
-
100
-
mJ
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