DIM400PBM17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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FEATURES
s
10
s Short Circuit Withstand
s
High Thermal Cycling Capability
s
Non Punch Through Silicon
s
Isolated MMC Base with AlN Substrates
APPLICATIONS
s
Matrix Converters
s
Brushless Motor Controllers
s
Frequency Converters
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM400PBM17-A000 is a bi-directional 1700V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) switch. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10
s short circuit withstand. This module
is optimised for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400PBM17-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
DRM
1700V
V
T
(typ)
4.9V
I
C
(max)
400A
I
C(PK)
(max)
800A
DIM400PBM17-A000
IGBT Bi-Directional Switch Module
Preliminary Information
Replaces issue June 2002, version DS5524-2.0
DS5524-2.2 July 2002
Fig. 1 Bi-directional switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: P
(See package details for further information)
3(C2)
2(C1)
1(E1/E2)
7(E
2
)
6(G
2
)
5(E
1
)
4(G
1
)
1
2
3
5
84
67
DIM400PBM17-A000
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
V
GE
= 0V
-
T
case
= 75C
1ms, T
case
= 110C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1800V, V
2
= 1300V, 50Hz RMS
Symbol
V
DRM
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Units
V
V
A
A
W
kA
2
s
V
PC
Max.
1700
20
400
800
3470
30
4000
10
Parameter
Off-state repetitive maximum voltage
(measured across terminals 2 and 3)
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Partial discharge - per module
DIM400PBM17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
20mm
Clearance:
10mm
CTI (Critical Tracking Index): 175
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
36
80
8
150
125
125
5
2
10
Typ.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
-
-
-
DIM400PBM17-A000
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 20mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 400A
V
GE
= 15V, I
C
= 400A, T
case
= 125C
V
GE
= 15V, I
C
= 400A
V
GE
= 15V, I
C
= 400A, T
case
= 125C
DC
t
p
= 1ms
I
F
= 400A
I
F
= 400A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 1000V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
On-state voltage
(measured across terminals 2 and 3)
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. I
SC
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
V
T
I
F
I
FM
V
F
C
ies
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
V
V
A
A
V
V
nF
nH
m
A
A
Max.
1
12
2
6.5
3.2
4.0
-
-
400
800
2.5
2.6
-
-
-
-
-
Typ.
-
-
-
5.5
2.7
3.4
4.9
5.7
-
-
2.2
2.3
30
20
0.27
1850
1600
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Note:
L* is the circuit inductance + L
M
DIM400PBM17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1150
100
120
250
250
150
4.5
100
230
70
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 400A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 400A, V
R
= 900V,
dI
F
/dt = 3000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1400
130
180
400
250
170
170
270
100
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 400A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 400A, V
R
= 900V,
dI
F
/dt = 2500A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
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