DIM600BSS12-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/9
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Replaces issue September 2003, version PDS5651-2.0
PDS5702-1.2 January 2004
FEATURES
I
Trench Gate Field Stop Technology
I
Low Conduction Losses
I
Low Switching Losses
I
10
s Short Circuit Withstand
APPLICATIONS
I
Motor Drives
I
Wind Turbines
I
UPS Systems
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM600BSS12-E000 is a single switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10
s short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM600BSS12-E000
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
CES
1200V
V
CE(sat)
(typ)
1.7V
I
C
(max)
600A
I
C(PK)
(max)
1200A
DIM600BSS12-E000
Single Switch IGBT Module
Fig. 1 Single switch circuit diagram
Fig. 2 Module Outline
Outline type code: B
(See package details for further information)
2(E)
3(G
1
)
1(C)
5(E
1
)
4(C
1
)
DIM600BSS12-E000
2/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V
-
T
case
= 80C
1ms, T
case
= 110C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1300V, V
2
= 1000V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Units
V
V
A
A
kW
kA
2
s
kV
pC
Max.
1200
20
600
1200
2.75
45
2.5
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Partial discharge - per module
DIM600BSS12-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M6
Electrical connections - M6
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Al
2
O
3
Clearance:
11mm
Baseplate material:
Cu
CTI (Critical Tracking Index):
425
Creepage distance:
20mm
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
45
80
15
150
125
125
5
5
2
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
3
2.5
1.1
DIM600BSS12-E000
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 24mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 600A
V
GE
= 15V, I
C
= 600A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 600A
I
F
= 600A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 900V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance - per arm
Internal transistor resistance
Short circuit. I
SC
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
m
A
A
Max.
1
5
2
6.5
2.15
2.5
600
1200
2.15
2.15
-
-
-
-
-
Typ.
-
-
-
5.8
1.7
2.0
-
-
1.65
1.65
42
20
0.23
2400
-
Min.
-
-
-
5.0
-
-
-
-
-
-
-
-
-
-
-
Note:
* L is the circuit inductance + L
M
DIM600BSS12-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
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Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
550
100
62
200
120
60
6
45
360
18
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 600A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
=
3
.6
R
G(OFF)
= 1.8
L ~ 70nH
I
F
= 600A, V
R
= 600V,
dI
F
/dt = 4800A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
700
150
95
250
120
80
90
440
36
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 600A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
=
3
.6
R
G(OFF)
= 1.8
L ~ 70nH
I
F
= 600A, V
R
= 600V,
dI
F
/dt = 4400A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Note:
Switching Characteristic measurements taken using standard driver circuit conditions.
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