DIM800NSM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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FEATURES
I
10
s Short Circuit Withstand
I
High Thermal Cycling Capability
I
Non Punch Through Silicon
I
Isolated MMC Base with AlN Substrates
APPLICATIONS
I
High Reliability Inverters
I
Motor Controllers
I
Traction Drives
I
Choppers
The Powerline range of high power modules includes half
bridge, chopper, dual and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM800NSM33-A000 is a single switch 3300V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10
s short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800NSM33-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
3300V
V
CE(sat)
*
(typ)
3.2V
I
C
(max)
800A
I
C(PK)
(max)
1600A
*(measured at the power busbars and not the auxiliary terminals)
DIM800NSM33-A000
Single Switch IGBT Module
Replaces June 2002, version DS5486-4.1
DS5486-5.0 February 2003
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: N
(See package details for further information)
C1
E1
C2
E2
G
E
2
C
1
E
2
- Aux Emitter
C
1
- Aux Collector
C2
C1
Aux C
G
Aux E
E1
E2
External connection
External connection
DIM800NSM33-A000
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Test Conditions
V
GE
= 0V
-
T
case
= 85C
1ms, T
case
= 115C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 3500V, V
2
= 2600V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
Units
V
V
A
A
kW
kA
2
s
V
pC
Max.
3300
20
800
1600
10.4
320
6000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value (Diode arm)
Isolation voltage - per module
Partial discharge - per module
DIM800NSM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Critical Tracking Index): 175
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor (per switch)
Thermal resistance - diode (per switch)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
12
24
6
150
125
125
5
2
10
Typ.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
-
-
-
DIM800NSM33-A000
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 80mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 800A
V
GE
= 15V, I
C
= 800A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 800A
I
F
= 800A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 2500V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Reverse transfer capacitance
Module inductance
Internal transistor resistance
Short circuit. I
SC
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
C
res
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nF
nH
m
A
A
Max.
4
60
8
6.5
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
3.2
4.0
800
1600
2.5
2.5
180
2.6
11
0.135
5200
4400
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
Note:
Measured at the power busbars and not the auxiliary terminals)
L* is the circuit inductance + L
M
DIM800NSM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1300
200
850
500
250
920
10
370
780
440
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
= 2.2
C
ge
= 150nF
L ~ 100nH
I
F
= 800A, V
CE
= 1800V,
dI
F
/dt = 5200A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
rec
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1600
250
900
500
300
1500
650
800
760
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
= 2.2
C
ge
= 150nF
L ~ 100nH
I
F
= 800A, V
CE
= 1800V,
dI
F
/dt = 3600A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
DIM800NSM33-A000
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
200
400
600
800
1000
1200
1400
1600
0
2
4
1
3
5
6
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
ge
= 10V
V
ge
= 12V
V
ge
= 15V
V
ge
= 20V
Common emitter
T
case
= 25C
V
ce
is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
1400
1600
0
2
5
1
3
4
6
7
8
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
V
ge
= 10V
V
ge
= 12V
V
ge
= 15V
V
ge
= 20V
Common emitter
T
case
= 125C
V
ce
is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
1400
0
200
400
600
800
1000
Collector current, I
C
- (A)
Switching energy, E
sw
- (mJ)
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
Conditions:
T
c
= 125C,
R
g
= 2.2 Ohms,
V
cc
= 1800V,
C
ge
= 150nF
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Gate resistance, R
g
- (ohms)
Switching energy, E
sw
- (mJ)
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
Conditions:
T
c
= 125C
I
C
= 800A
V
cc
= 1800V
C
ge
= 150nF
DIM800NSM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
0
200
400
600
800
1000
1200
1400
1600
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Forward voltage, V
F
- (V)
Forward current, I
F
- (A)
T
j
= 25C
T
j
= 125C
V
F
is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
1400
1600
1800
0
500
1000
1500
2000
2500
3000
3500
Collector emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
T
case
= 125C
V
ge
= 15V
R
g(min)
= 2.2
Module
Chip
0
200
400
600
800
1000
1200
1400
0
500
1000
1500
2000
2500
3000
3500
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
IGBT
R
i
(C/KW)
i
(ms)
Diode
R
i
(C/KW)
i
(ms)
1
0.45
0.13
0.89
0.13
2
2.82
5.80
5.63
5.80
3
3.94
48.03
7.88
48.03
4
4.78
248.53
9.56
248.53
Diode
Transistor
0.1
1
10
100
Transient thermal impedance, Z
th (j-c)
- (
C/kW )
0.001
0.01
1
0.1
10
Pulse width, t
p
- (s)
DIM800NSM33-A000
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig. DC current rating vs case temperature
0
200
400
600
800
1000
1200
1400
1600
0
20
40
60
80
100
120
140
DC collector current, I
C
- (A)
Case temperature, T
case
- (C)
DIM800NSM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/10
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PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
140
31.5
4x M8
28
5
38
6x M4
45.2
40
20
43.5
18
57
57
65
65
6x 7
62
20
62
20
48.8
10.35
24.5
10.65
C1
E1
C2
E2
G
E
2
C
1
Main Terminal screw plastic hole depth (M8) = 16.8 0.3
Auxiliary and Gate pin plastic hole depth (M4) = 9 0.3
Copper terminal thickness, Main Terminal pins = 1.5 0.1
Copper terminal thickness, Auxiliary and Gate pin = 0.9 0.1
Nominal weight: 1050g
Module outline type code: N
E
2
- Aux Emitter
C
1
- Aux Collector
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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