Dynex Semiconductor Limited, Doddington Road, Lincoln, United Kingdom, LN6 3LF
Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550
www.dynexsemi.com
Registered in England and Wales: No 3824626 Registered Office: Doddington Road, Lincoln, United Kingdom, LN6 3LF
DIM900ESM45-F000
Single Switch IGBT Module
DS5872-1.0 October 2005 (LN24283)
Preliminary
Data
FEATURES
10s Short Circuit Withstand
Soft Punch Through Silicon
Lead Free construction
Isolated MMC Base with AlN Substrates
High Thermal Cycling Capability
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 6500V and
currents up to 3600A.
The DIM900ESM45-F000 is a single switch 4500V, soft
punch through n-channel enhancement mode, insulated
gate bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus 10us
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers
to optimise circuit layouts and utilise grounded heat sinks
for safety
.
ORDERING INFORMATION
Order As:
DIM900ESM45-F000
Note: When ordering, please use the complete part number
KEY PARAMETERS
V
CES
4500V
V
CE(sat)
*
(typ)
3.0V
I
C
(max) 900A
I
C(PK)
(max) 1800A
*(measured at the power busbars and not the auxiliary terminals)
Fig. 1 Single switch circuit diagram
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
DIM900ESM45-F000
2
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate
safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
V
CES
Collector-emitter voltage
V
GE
=0V
4500
V
V
GES
Gate-emitter voltage
20
V
I
C
Continuous collector current
T
case
=90 C
900
A
I
C(PK)
Peak collector current
1ms, T
case
=115 C
1800
A
P
max
Max.transistor power
dissipation
T
case
=25 C, T
j
=150 C
15.6
kW
I
2
t
Diode I
2
t value (Diode arm)
V
R
=0,t
p
=10ms,T
vj
=125 C
TBD
kA
2
s
V
isol
Isolation voltage
Commoned terminals to base plate. AC RMS,1
min,50Hz
6000
kV
Q
PD
Partial discharge
IEC1287.V
1
=3750V, V
2
=2750V, 50Hz RMS
10
pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
29mm
Clearance:
20mm
CTI (Critical Tracking Index)
175
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
R
th(j-c)
Thermal resistance -transistor
Continuous dissipation -
junction to case
-
8
C/kW
R
th(j-c)
Thermal resistance -diode
Continuous dissipation -
junction to case
-
16
C/kW
R
th(c-h)
Thermal resistance -case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
-
6
C/kW
T
j
Junction temperature
Transistor
-
-
150
C
Diode
-
-
125
C
T
stg
Storage temperature range
-
-40
-
125
C
Screw torque
Mounting M6
-
-
5
Nm
Electrical connections -M4
-
-
2
Nm
Electrical connections -M8
-
-
10
Nm
DIM900ESM45-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3
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7
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ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
CES
Collector cut-off current
V
GE
=0V,V
CE
=V
CES
3
mA
V
GE
=0V,V
CE
=V
CES
,T
case
=125 C
90
mA
I
GES
Gate leakage current
V
GE
=
20V,V
CE
=0V
8
uA
V
GE(TH)
Gate threshold voltage
I
C
=120mA,V
GE
=V
CE
5.5
6.5
7.0
V
V
CE(sat)
Collector-emitter saturation voltage
V
GE
=15V,I
C
=900A
3.0
V
V
GE
=15V,I
C
=900A,T
VJ
=125 C
3.5
V
I
F
Diode forward current
DC
900
A
I
FM
Diode maximum forward current
t
p
=1ms
1800
A
V
F
Diode forward voltage
I
F
=900A
3.5
V
I
F
=900A,T
VJ
=125 C
3.9
V
C
ies
Input capacitance
V
CE
=25V,V
GE
=0V,f =1MHz
200
nF
C
res
Reverse transfer capacitance
V
CE
=25V,V
GE
=0V,f =1MHz
2.4
nF
L
M
Module inductance
--
10
nH
R
INT
Internal resistance
90
SC
Data
Short circuit.I SC
T
j
125 C,V
CC
3000V,
I
1
4200
A
t
p
=
10 us,
I
2
V
CE(max)
=V
CES
L*.di/dt
IEC 60747-9
3800
A
Note:
Measured at the power busbars and not the auxiliary terminals
*
L is the circuit inductance + L
M
DIM900ESM45-F000
4
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7
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
t
d(off)
Turn-off delay time
I
C
=900A
6.0
us
t
f
Fall time
V
GE
=15V
250
ns
E
OFF
Turn-off energy loss
V
CE
=2250V
1900
mJ
t
d(on)
Turn-on delay time
R
G(ON)
=3.3
R
G(OFF)
=7.5
900
ns
t
r
Rise time
C
ge
=160nF
250
ns
E
ON
Turn-on energy loss
L ~200nH
4500
mJ
Q
g
Gate charge
TBD
uC
Q
rr
Diode reverse recovery charge
I
F
=900A,V
CE
=2250V,
TBD
uC
I
rr
Diode reverse recovery current
dI
F
/dt =3600A/us
TBD
A
E
rec
Diode reverse recovery energy
750
mJ
T
case
= 125C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
t
d(off)
Turn-off delay time
I
C
=900A
6.0
us
t
f
Fall time
V
GE
=15V
250
ns
E
OFF
Turn-off energy loss
V
CE
=2250V
2250
mJ
t
d(on)
Turn-on delay time
R
G(ON)
=3.3
R
G(OFF)
=7.5
700
ns
t
r
Rise time
C
ge
=160nF
200
ns
E
ON
Turn-on energy loss
L ~200nH
5200
mJ
Q
rr
Diode reverse recovery charge
I
F
=900A,V
CE
=2250V,
TBD
uC
I
rr
Diode reverse recovery current
dI
F
/dt =3600A/us
TBD
A
E
rec
Diode reverse recovery energy
1150
mJ
DIM900ESM45-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
5
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7
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0
200
400
600
800
1000
1200
1400
1600
1800
2000
2000
2500
3000
3500
4000
4500
5000
Collector emitter voltage, Vce - (V)
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
,
I
c
-
(
A
)
Tvj=125C
Tvj=25C
Conditions:
Rgoff=7.5
Cge=160nF
Vge=15V
Vcc=3000V
Ls<120nH
0
200
400
600
800
1000
1200
1400
0
500
1000
1500
2000
2500
3000
3500
4000
Reverse voltage, Vr - (V)
R
e
v
e
r
s
e
r
e
c
o
v
e
r
y
c
u
r
r
e
n
t
,
I
r
r
-
(
A
)
Tj=125C
Reverse bias safe operating area
Diode reverse bias safe operating area
1
1 0
1 0 0
0 . 0 0 1
0 . 0 1
0 . 1
1
1 0
P u l s e t i m e , t p - ( s )
T
r
a
n
s
i
e
n
t
t
h
e
r
m
a
l
i
m
p
e
d
a
n
c
e
,
Z
t
h
(
j
-
c
)
-
(
'
C
/
k
W
)
R t h I G B T
R t h d i o d e
1
2
3
4
IGBT
Ri (`C/kW)
0.30
1.40
2.43
3.90
ti (ms)
0.17
8.08
51.92
280.5
Diode
Ri (`C/kW)
0.60
2.81
4.85
7.81
ti (ms)
0.17
8.08
51.92
280.5
Transient thermal impedance
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