Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
P-CHANNEL ENHANCEMENT MODE
MOSFET
3N163, 3N164
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
FAST SWITCHING
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
@ 25
C (unless otherwise noted)
Drain-Source or Drain-Gate Voltage
3N163
-40V
3N164
-30V
Transient G-S Voltage (NOTE 1)
125V
Drain Current
50mA
Storage Temperature
-65
C to +200
C
Power Dissipation
375mW
ELECTRICAL CHARACTERISTICS @ 25
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
3N163
3N164 UNITS
CONDITIONS
MIN MAX MIN MAX
I
GSSF
Gate Forward Current
-10
-10
pA
V
GS
=-40V
V
DS
=0 (3N163)
T
A
=+125
C
-25
-25
V
GS
=-30V
V
DS
=0 (3N164)
BV
DSS
Drain-Source Breakdown Voltage -40
-30
I
D
=-10
A
V
GS
=0
BV
SDS
Source-Drain Breakdown Voltage
-40
-30
V
I
S
=-10
A
V
GD
=0
V
BD
=0
V
GS(th)
Threshold Voltage
-2.0
-5.0
-2.0
-5.0
V
DS
=V
GS
I
D
=-10
A
V
GS(th)
Threshold Voltage
-2.0
-5.0
-2.0
-5.0
V
DS
=-15V
I
D
=-10
A
V
GS
Gate Source Voltage
-3.0
-6.5
-3.0
-6.5
V
DS
=-15V
I
D
=-0.5mA
I
DSS
Zero Gate Voltage Drain Current
200
400
pA
V
DS
=-15V
V
GS
=0
I
SDS
Source Drain Current
400
800
V
DS
=15V
V
GS
=V
DB
=0
r
DS(on)
Drain-Source on Resistance
250
300
ohms
V
GS
=-20V
I
D
=-100
A
I
D(on)
On Drain Current
-5.0
-30
-3.0
-30
mA
V
DS
=-15V
V
GS
=-10V
g
fs
Forward Transconductance
2000
4000
1000
4000
s
V
DS
=-15V
I
D
=-10mA f=1kHz
g
os
Output Admittance
250
250
C
iss
Input Capacitance-Output Shorted
2.5
2.5
pF
V
DS
=-15V
I
D
=-10mA f=1MHz
C
rss
Reverse Transfer Capacitance
0.7
0.7
(NOTE 2)
C
oss
Output Capacitance Input Shorted
3.0
3.0
1
2
3
4
Case
G
D
S
D
S
G
Case
18 X 30 MILS
TO-72
Bottom View
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
SWITCHING CHARACTERISTICS T
A
=25
C and V
BS
=0 unless otherwise noted)
SYMBOL
CHARACTERISTICS
3N163
3N164 UNITS
CONDITIONS
MIN MAX MIN MAX
t
on
Turn-On Delay Time
12
12
ns
V
DD
=-15V
t
r
Rise Time
24
24
I
D(on)
=-10mA
(NOTE 2)
t
off
Turn-Off Time
50
50
R
G
=R
L
=1.4K
90%
Switching Times Test Circuit
NOTES:
1. Devices must not be tested at
125V more than once, nor for longer than 300ms.
2. For design reference only, not 100% tested.
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress
ratings only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
V
DD
1
2
OUT
V
R
R
50
Switching Times Test Circuit
t
10%
10%
10%
10%
t
on
r
off
t
INPUT PULSE
Rise Time 2ns
Pulse Width 200ns
SAMPLING SCOPE
T 0.2ns
C 2pF
R 10M
r
IN
IN
TYPICAL SWITCHING WAVEFORM
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