LS421, LS422, LS423,
LS424, LS425, LS426
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Integrated Systems
22 X 20 MILS
G1 S2
S1 G2
D2
D1
4
3 5
2 6
1 7
C
G1 S2
D1 D2
S1 G2
TO-78
BOTTOM VIEW
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
FEATURES
HIGH INPUT IMPEDANCE
I
G
=0.25pA MAX
HIGH GAIN
gfs=120
mho MIN
LOW POWER OPERATION
V
GS(off)
=2V MAX
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-65
to +150
C
Operating Junction Temperature
+150
C
Maximum Voltage and Current for Each Transistor NOTE 1
-V
GSS
Gate Voltage to Drain or Source
40V
-V
DSO
Drain to Source Voltage
40V
-I
G(f)
Gate Forward Current
10mA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ +125
C
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX.
UNITS CONDITIONS
BV
GSS
Breakdown Voltage
40
60
--
V
V
DS
= 0
I
G
= 1nA
BV
GGO
Gate-to-Gate Breakdown
40
--
--
V
I
G
= 1
A
I
D
= 0
I
S
= 0
TRANSCONDUCTANCE
Y
fss
Full Conduction
300
--
1500
mho
V
DS
= 10V
V
GS
= 0
f= 1kHz
Y
fs
Typical Operation
120
200
350
mho
V
DG
= 10V
I
D
= 30
A
f= 1kHz
DRAIN CURRENT
60
--
1000
A
LS421-3
V
DS
= 10V
V
GS
= 0
I
DSS
Full Conduction
60
--
1800
A
LS424-6
ELECTRICAL CHARACTERISTICS @ 25
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS
|
V
GS1-2
/
T| max. Drift vs. Temperature
10
25
40
10
25
40
V/
C
V
DG
= 10V I
D
= 30
A
T
A
=-55
C to +125
C
|V
GS1-2
| max.
Offset Voltage
10
15
25
10
15
25
mV
V
DG
=10V
I
D
= 30
A
GATE VOLTAGE
V
GS(off)
Pinchoff Voltage
2.0
2.0
2.0
3.0
3.0
3.0
V
V
DS
=10V
I
D
= 1nA
V
GS
Operating Range
1.8
1.8
1.8
2.9
2.9
2.9
V
V
DG
=10V
I
D
= 30
A
I
G
max.
Operating
.25
.25
.25
.500
.500
.500
pA
V
DG
=10V
I
D
= 30
A
-I
G
max.
High Temperature
250
250
250
500
500
500
pA
T
A
= +125
C
-I
GSS
max.
At Full Conduction
1.0
1.0
1.0
3.0
3.0
3.0
pA
V
DS
= 0V
V
GS
= 20V
-I
GSS
max.
High Temperature
1.0
1.0
1.0
3.0
3.0
3.0
nA
T
A
= +125
C
SYMBOL
CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS
OUTPUT CONDUCTANCE
Y
OSS
Full Conduction
--
--
10
mho
V
DS
= 10V
V
GS
= 0
Y
OS
Operating
--
0.1
3.0
mho
V
DG
= 10V
I
D
= 30
A
COMMON MODE REJECTION
CMR
-20 log |
V
GS1-2
/
V
DS
|
--
90
--
dB
V
DS
= 10 to 20V
I
D
= 30
A
CMR
-20 log |
V
GS1-2
/
V
DS
|
--
90
--
dB
V
DS
= 5 to 10V
I
D
= 30
A
NOISE
NF
Figure
--
--
1.0
dB
V
DG
= 10V I
D
= 30
A
R
G
= 10M
f= 10Hz
e
n
Voltage
--
20
70
nV/
Hz
V
DG
= 10V
I
D
= 30
A f= 10Hz
10
V
DG
= 10V
I
D
= 30
A f= 1kHz
CAPACITANCE
C
ISS
Input
--
--
3.0
pF
V
DS
= 10V
V
GS
= 0
f= 1MHz
C
RSS
Reverse Transfer
--
--
1.5
pF
V
DS
= 10V
V
GS
= 0
f= 1MHz
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1
8
4
5
6
0.046
0.036
45
0.048
0.028
0.100
0.050
7
TO-78
0.335
0.370
0.305
0.335
0.016
0.019
0.165
0.185
0.040
MAX.
DIM. A
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45
1
2 3 4
5
6
7
8
0.029
0.045
SEATING
PLANE
S1 1
2
3
4
5
6
7
8
D1
SS
G1
S2
G2
SS
D2
P-DIP
S1 1
2
3
4
5
6
7
8
D1
SS
G1
S2
G2
SS
D2
0.150
0.158
(3.81)
(4.01)
0.188
0.197
0.228
0.244
(5.79)
(6.20)
SOIC
0.320
0.290
(8.13)
(7.37)
0.405
MAX.
(10.29)
(4.78)
(5.00)
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
N/C
G2
D2
S2
S1
D1
G1
N/C
N/C
G2
D2
S2
S1
D1
G1
N/C
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