FEATURES
DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301
HIGH INPUT INPEDANCE
I
G
= 0.100 pA
HIGH GAIN
g
fs
= 70 S
ABSOLUTE MAXIMUM RATINGS
1
@ 25 C (unless otherwise stated)
Maximum Temperatures
Storage Temperature (TO-72)
-65 to 175C
Storage Temperature (TO-92)
-65 to 150C
Maximum Power Dissipation
Continuous Power Dissipation
300mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-30V
Gate to Source
-30V
COMMON ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX
UNIT
CONDITIONS
BV
GSS
Gate to Source Breakdown Voltage
-30
V
DS
= 0V, I
D
= -1A
V
GS(off)
Gate to Source Cutoff Voltage
0.6
3.0
V
V
DS
= 10V, I
D
= 1nA
I
GSS
Gate
Leakage
Current
-1
V
DS
= 0V, V
GS
= -15V
I
G
Gate Operating Current
0.04
pA
V
DG
= 6V, I
D
= 5A
I
DSS
Drain to Source Saturation Current
30
500
A
V
DS
= 10V, V
GS
= 0V
g
fs
Forward
Transconductance
70
300
S
V
DS
= 10V, V
GS
= 0V, f = 1kHz
C
iss
Input
Capacitance
3
C
rss
Reverse Transfer Capacitance
1.5
pF V
DS
= 10V, V
GS
= 0V, f = 1MHz
e
n
Equivalent Noise Voltage
45
150 nV/Hz
V
DG
= 10V, I
D
= 50A, f = 100Hz
LS5301, PF5301
VERY HIGH INPUT IMPEDANCE
N-CHANNEL JFET
Linear Integrated Systems
LS SERIES
D
S
G
2
1
3
BOTTOM VIEW
TO-72
4
C
PF SERIES
TO-92
BOTTOM VIEW
1
2
3
D S G
NOTES
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
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n or
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