MP03 XXX 190 Series
1/10
Code
Circuit
HBT
HBP
HBN
Repetitive
Peak
Voltages
V
DRM
V
RRM
Type
Number
Conditions
1200
1000
800
MP03/190 - 12
MP03/190 - 10
MP03/190 - 08
T
(vj)
= 125
o
C
I
DRM
= I
RRM
= 30mA
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available. For full description of part
number see "Ordering Instructions" on page 3.
Symbol
Parameter
Max.
Units
158
A
Conditions
160
A
T
case
= 75
o
C
T
heatsink
= 75
o
C
T
heatsink
= 85
o
C
T
case
= 85
o
C
T
case
= 75
o
C
I
T(RMS)
RMS value
A
133
A
300
Mean on-state current
Halfwave, resistive load
I
T(AV)
190
A
Module outline type code: MP03.
See Package Details for further information
VOLTAGE RATINGS
CURRENT RATINGS - PER ARM
PACKAGE OUTLINE
KEY PARAMETERS
V
DRM
1200V
I
TSM
5500A
I
T(AV)
(per arm)
190A
V
isol
2500V
FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (non-toxic) Isolation Medium
APPLICATIONS
s
Motor Control
s
Controlled Rectifier Bridges
s
Heater Control
s
AC Phase Control
CIRCUIT OPTIONS
MP03 XXX 190 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS5099-3.0
DS5099-4.0 January 2000
MP03 XXX 190 Series
2/10
Symbol
Parameter
Conditions
Max.
Units
A
V
R
= 0
V
R
= 50% V
RRM
V
R
= 0
V
R
= 50% V
RRM
A
2
s
I
2
t
10ms half sine;
T
j
= 125
o
C
10ms half sine;
T
j
= 125
o
C
Surge (non-repetitive) on-state current
I
TSM
I
2
t for fusing
Symbol
Parameter
Conditions
Linear rate of rise of off-state voltage
V
Units
Max.
mA
V/
s
On-state voltage
30
V
TM
I
RRM
/I
DRM
Peak reverse and off-state current
To 60% V
DRM
T
j
= 125
o
C
At V
RRM
/V
DRM
, T
j
= 125
o
C
At 500A, T
case
= 25
o
C - See Note 1
Symbol
Parameter
Conditions
o
C/W
Units
o
C/W
o
C/W
Thermal resistance - case to heatsink
per Thyristor or Diode
R
th(c-hs)
R
th(j-c)
Virtual junction temperature
T
vj
o
C
o
C
T
sto
Storage temperature range
Mounting torque = 5Nm
with mounting compound
3 phase
halfwave
dc
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Max.
125
Rate of rise of on-state current
V
T(TO)
Threshold voltage
V
m
0.70
At T
vj
= 125
o
C - See Note 1
At T
vj
= 125
o
C - See Note 1
r
T
On-state slope resistance
-40 to 125
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
dV/dt
o
C/W
0.05
Isolation voltage
V
isol
2.5
Thermal resistance - junction to case
per Thyristor or Diode
5500
4200
151000
88200
A
A
2
s
0.21
0.22
0.23
kV
1.30
200*
A/
s
100
0.88
dI/dt
From 67% V
DRM
to 400A Repetitive 50Hz
Gate source 20V, 20
Rise time 0.5
s, T
j
=125
o
C
SURGE RATINGS - PER ARM
THERMAL & MECHANICAL RATINGS
DYNAMIC CHARACTERISTICS
MP03 XXX 190 Series
3/10
Symbol
Parameter
Conditions
Gate non-trigger voltage
V
Units
Max.
3.0
0.20
Typ.
mA
V
V
GD
Gate trigger voltage
200
V
GT
I
GT
Gate trigger current
V
D
= V
DRM
, T
j
= 125C
V
DRM
= 6V, T
case
= 25
o
C, R
L
= 6
V
DRM
= 6V, T
case
= 25
o
C, R
L
= 6
-
-
-
V
RGM
Peak reverse gate voltage
V
5.0
-
A
-
4
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
GM
P
G(AV)
Peak gate power
Mean gate power
-
-
16
3
W
W
Examples:
MP03 HBP190 - 08
MP03 HBN190 - 12
MP03 HBT190 - 10
Adequate heatsinking is required to maintain the base temperature
at 75
o
C if full rated current is to be achieved. Power dissipation
may be calculated by use of V
T(TO)
and r
T
information in accordance
with standard formulae. We can provide assistance with
calculations or choice of heatsink if required.
The heatsink surface must be smooth and flat; a surface finish of
N6 (32
in) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up
and foreign material. Care should be taken to ensure no foreign
particles remain.
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.
After application of thermal compound, place the module squarely
over the mounting holes, (or 'T' slots) in the heatsink. Using a
torque wrench, slowly tighten the recommended fixing bolts at
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 5Nm (44lb.ins) is
reached at both ends.
It is not acceptable to fully tighten one fixing bolt before starting to
tighten the others. Such action may DAMAGE the module.
GATE TRIGGER CHARACTERISTICS AND RATINGS
ORDERING INSTRUCTIONS
Part number is made up of as follows:
MP03 HBT 190 - 12
MP
= Pressure contact module
03
= Outline type
HBT = Circuit configuration code (see "circuit options" - front page)
190
= Nominal average current rating at T
case
= 75
o
C
12
= V
RRM
/100
Note: Diode ratings and characteristics are comparable with SCR in types HBP or HBN.
Types HBP or HBN can also be supplied with diode polarity reversed, to special order.
MOUNTING RECOMMENDATIONS
MP03 XXX 190 Series
4/10
50
10
1
0.1
Gate voltage V
G
- (V)
0.01
0.1
1
10
Gate current I
G
- (A)
T
j
= -40C
T
j
= 125C
T
j
= 25C
P
GM
= 16W
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage V
T
- (V)
2500
2000
1500
1000
500
0
Instantaneous on-state current I
T
- (A)
T
j
= 125C
CURVES
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
Fig. 2 Gate trigger characteristics
MP03 XXX 190 Series
5/10
1
10
1
2 3 4 5
50
0
2
6
8
Duration
0
10
20
Peak half sine wave on-state current - (kA)
ms
cycles at 50Hz
I
2
t value - A
2
s x 10
3
30
I
2
t
40
50
60
70
80
90
100
10
4
0.001
0.010
0.100
1.0
10
100
Time - (s)
0
0.1
0.2
0.3
Thermal Impedance - (C/W)
R
th(j-hs)
R
th(j-c)
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% V
RRM
, T
case
= 125C (Thyristor or diode)
PDF 
ZIP