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Электронный компонент: LTST-C150TGKT

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LITE-ON TECHNOLOGY CORPORATION
P r o p e r t y o f L i t e - O n O n l y
Features
* Meet ROHS, Green Product.
* Package In 8mm Tape On 7" Diameter Reels.
* EIA STD package.
* I.C. compatible.
* Compatible With Automatic Placement Equipment.
* Compatible With Infrared And Vapor Phase Reflow Solder Process.
Package Dimensions
Part No.
Lens
Source Color
LTST-C150TGKT
Water Clear
InGaN Green
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is 0.10 mm (.004") unless otherwise noted.
Part No. : LTST-C150TGKT
Page : 1 of 11
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
P r o p e r t y o f L i t e - O n O n l y
Absolute Maximum Ratings At Ta=25
Parameter LTST-C150TGKT
Unit
Power Dissipation
76
mW
Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
100 mA
DC Forward Current
20
mA
Derating Linear From 50C 0.25
mA/C
Reverse Voltage
5
V
Operating Temperature Range
-20C to + 80C
Storage Temperature Range
-30C to + 100C
Wave Soldering Condition
260C For 5 Seconds
Infrared Soldering Condition
260C For 5 Seconds
Vapor Phase Soldering Condition
215C For 3 Minutes
Part No. : LTST-C150TGKT
Page : 2 of 11
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
P r o p e r t y o f L i t e - O n O n l y
Suggestion Profile:
(1) Suggestion IR Reflow Profile For Normal Process
(2) Suggestion IR Reflow Profile For Pb Free Process
R e c o m m e n d e d P ro file B e tw e e n A s s e m b le A n d H e a t-R e sista n c e L in e
T h e P ro file is a v a ila b le th a t m u s t to u se S n A g C u s o ld e r p a ste
Part No. : LTST-C150TGKT
Page : 3 of 11
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
P r o p e r t y o f L i t e - O n O n l y
Electrical Optical Characteristics At Ta=25
Parameter Symbol
Part No.
LTST-
Min. Typ. Max. Unit Test
Condition
Luminous Intensity
IV
C150TGKT
71.0
150.0 mcd
IF = 20mA
Note 1
Viewing Angle
21/2
C150TGKT
130
deg
Note 2 (Fig.6)
Peak Emission Wavelength
P
C150TGKT
530 nm
Measurement
@Peak (Fig.1)
Dominant Wavelength
d
C150TGKT
525 nm
IF = 20mA
Note 3
Spectral Line Half-Width
C150TGKT
35 nm
Forward Voltage
VF
C150TGKT
2.80
3.20
3.60
V
IF = 20mA
Reverse Current
IR
C150TGKT
10
A
VR = 5V
Notes: 1. Luminous intensity is measured with a light sensor and filter combination that approximates the
CIE eye-response curve.
2. 1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
3. The dominant wavelength, d is derived from the CIE chromaticity diagram and represents the
single wavelength which defines the color of the device.
4. Caution in ESD:
Static Electricity and surge damages the LED. It is recommend to use a wrist band or anti-electrostatic
glove when handling the LED. All devices, equipment and machinery must be properly grounded.
Part No. : LTST-C150TGKT
Page : 4 of 11
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
P r o p e r t y o f L i t e - O n O n l y

Bin Code List
Part No. : LTST-C150TGKT
Page : 5 of 11
BNS-OD-C131/A4
Forward Voltage Unit: V @20mA
Bin Code
Min.
Max.
D7 2.80 3.00
D8 3.00 3.20
D9 3.20 3.40
D10 3.40 3.60
Tolerance on each Forward Voltage bin is +/-0.1 volt
Luminous Intensity Unit : mcd @20mA
Bin Code
Min.
Max.
Q 71.0
112.0
R 112.0
180.0
S 180.0
280.0
Tolerance on each Intensity bin is +/-15%
Dominant Wavelength Unit : nm @20mA
Bin Code
Min.
Max.
AP 520.0 525.0
AQ 525.0 530.0
AR 530.0 535.0
Tolerance for each Dominate Wavelength bin is +/- 1nm