TB0640H thru TB3500H
FEATURES
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 100A @ 10/1000us or 400 @
8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Denotes none cathode band
Weight : 0.093 grams
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
VDRM
- 58 to 320 Volts
IPP
- 100 Amperes
MAXIMUM RATINGS
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
THERMAL RESISTANCE
/W
UNIT
SYMBOL
%/
Junction to leads
CHARACTERISTICS
Typical positive temperature coefficient for brekdown voltage
Rth
(J-L)
V
BR
/
T
J
0.1
VALUE
20
100
Junction to ambient on print circuit (on recommended pad layout)
Rth
(J-A)
/W
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
I
PP
(A)
500
400
250
200
160
100
I
PP
,
PE
AK
PU
L
S
E C
U
R
R
E
N
T
(
%
)
100
50
0
tr
tp
TIME
Half value
Peak value (Ipp)
tr= rise time to peak value
tp= Decay time to half value
SMB
All Dimensions in millimeter
SMB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
4.06
4.57
3.94
3.30
1.96
2.21
0.31
0.15
5.21
5.59
0.05
0.20
2.01
2.62
0.76
1.52
C
B
A
H
E
F
G
D
SEMICONDUCTOR
LITE-ON
Bi-Directional
UNIT
SYMBOL
Non-repetitive peak impulse current @ 10/1000us
CHARACTERISTICS
storage temperature range
I
PP
I
TSM
T
STG
A
A
-55 to +150
VALUE
100
50
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction temperature range
T
J
-40 to +150
REV. 1-PRE, 07-May-2001, KSWB04
SYMBOL
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
PARAMETER
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Holding current
Note: 1
I
H
V
T
I
PP
C
O
On state voltage
Peak pulse current
Off state capacitance
Note: 2
Breakover current
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
V
I
NOTES: 1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the T
SPD
Triggers but does not return correctly to high-resistance state.
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0V
RMS
signal; VR=2V
DC
bias.
TB0640H
TB0720H
75
58
65
TB0900H
TB1100H
TB1300H
TB1500H
TB1800H
TB2300H
TB2600H
TB3100H
TB3500H
140
90
120
220
160
190
275
320
5
5
5
5
5
5
5
5
5
5
5
98
77
88
180
130
160
300
220
265
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
150
150
150
150
150
150
150
150
150
150
150
200
200
200
120
120
120
80
120
80
80
80
50
50
50
50
50
50
50
50
50
50
50
Max
PARAMETER
SYMBOL
UNITS
LIMIT
RATED
REPETITIVE
OFF-STATE
VOLTAGE
OFF-STATE
LEAKAGE
CURRENT
@ V
DRM
BREAKOVER
VOLTAGE
ON-STATE
VOLTAGE
@ I
T
=1.0A
HOLDING
CURRENT
OFF-STATE
CAPACITANCE
Max
Max
Max
Min
Max
Min
Typ
V
DRM
I
DRM
V
BO
V
T
I
BO
-
I
BO+
I
H-
Co
Volts
uA
Volts
Volts
mA
mA
mA
pF
ELECTRICAL CHARACTERISTICS
@ T
A=
25
unless otherwise specified
TB0640H thru TB3500H
BREAKOVER
CURRENT
800
800
800
800
800
800
800
800
800
800
800
Max
I
H+
mA
800
800
800
800
800
800
800
800
800
800
800
REV. 1-PRE, 07-May-2001, KSWB04
FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE
I(
DR
M)
,
O
F
F
S
T
A
T
E
CU
RR
EN
T
(
u
A
)
T
J
, JUNCTION TEMPERATURE (
)
V
DRM
=50V
100
10
1.0
0.1
0.001
0.01
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
)
-50
-25
0
25
50
75
125
150
N
O
R
M
A
L
IZ
ED
B
R
E
A
K
D
O
W
N
VO
L
T
AG
E
1.20
1.10
1.05
1.0
0.90
0.95
1.15
V
BR
(T
J
)
V
BR
(T
J
=25
)
100
175
FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE
vs JUNCTION TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
)
-50
-25
0
25
50
75
125
150
N
O
R
M
A
L
IZ
ED
BR
EA
KO
VE
R
V
O
L
T
A
G
E
1.10
1.05
1.0
0.95
100
175
FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE
vs JUNCTION TEMPERATURE
1.0
1.5
2.0
2.5
3.0
3.5
4.5
4.0
5.0
V (T); ON STATE VOLTAGE
I
(T
)
,
ON
S
T
A
T
E
CU
RR
E
N
T
FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE
1.0
10
100
T
J
=25
T
J
, JUNCTION TEMPERATURE (
)
N
O
RM
AL
I
Z
E
D
H
O
L
D
I
N
G
CU
RR
E
N
T
FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT
vs JUNCTION TEMPERATURE
VR, REVERSE VOLTAGE
NO
R
M
AL
IZ
E CAPACI
T
ANCE
FIG. 6 - RELATIVE VARIATION OF JUNCTION
CAPACITANCE vs REVERSE VOLTAGE BIAS
RATING AND CHARACTERISTICS CURVES
TB0640H thru TB3500H
-50
-25
0
25
50
75
100
125
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1
10
100
0.1
1
Tj =25
f=1MHz
V
RMS
= 1V
C
O
(VR)
C
O
(VR = 1V)
IH (T
J
)
IH
(T
J
=25
)
V
BO
(T
J
)
V
BO
(T
J
=25
)
REV. 1-PRE, 07-May-2001, KSWB04
The PTC (Positive Temperature Coefficient) is an overcurrent protection device
TELECOM
EQUIPMENT
E.G. MODEM
FUSE
TSPD 1
RING
TIP
TELECOM
EQUIPMENT
E.G. LINE
CARD
RING
TIP
TSPD 2
TSPD 3
PTC
PTC
TSPD 1
TELECOM
EQUIPMENT
E.G. ISDN
TSPD 1
RING
TIP
TSPD 2
PTC
PTC
TYPICAL CIRCUIT APPLICATIONS
TB0640H thru TB3500H
REV. 1-PRE, 07-May-2001, KSWB04
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