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Электронный компонент: 1KSMBJ120

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Silicon Avalanche Diodes
270
w w w . l i t t e l f u s e . c o m
1000W Surface Mount Transient Voltage Suppressor
The 1KSMBJ range of surface mount protectors utilizes the
proven glass passivated technology used in many Littelfuse
product portfolios. Rated at 1000 watts (10 x 1000 s double
exponential waveform), the 1KSMBJ bridges the gap left by
traditional types rated at 600 watts and 1500 watts, suiting
many applications where both power handling and size are
paramount. The extremely fast turn-on time (less than one pico
second), coupled with the low clamping factor and low on-state
impedance, make this range ideal for the protection of today's
circuits. Our specially selected range of voltages has been
chosen to fulfill optimum protection for use in automotive and
telecom applications.
FEATURES
RoHS Compliant
Available in breakdown voltages from 6.8v. to 160v;
specially designed for automotive applications
Response time: 1x10-12
.
secs (theoretical)
Glass passivated junction
Offers high-surge rating in compact package: bridges the
gap between 600W and 1.5KW
Forward surge rating:
100A 8.3ms single half sine wave
100% tested
Operating temperature: -55C to +150C
Agency Approvals: Recognized under the Components Program
of Underwriters Laboratories.
Agnecy File Numbers: E128662
1KSMBJ Series
SMBJ
Voltage
C A
Bi-Directional
5% Voltage Tolerance
Tape and reeled (3000 pcs)
ORDERING INFORMATION
Mechanical Specifications:
Weight:
0.093 grammes (approx)
Case:
DO-214AA Outline moulded plastic over
glass passivated junction. UL 94 V-0 rated
Terminals:
Solderable to MIL-STD-750 Method 2026
Solderable Leads:
23C for 10 seconds
Marking:
Cathode band, device code logo
Standard Packaging:
Supplied on reels of 3000 pieces. Tape
width 12mm. Follows requirements of
EIA 481-1
RoHS
Silicon Avalanche Diodes
271
w w w . l i t t e l f u s e . c o m
6
SILICON DIODE
ARRA
YS
Reverse
Stand Off
Voltage
V
R
(Volts)
Part
Number
Breakdown
Voltage
V
BR
(Volts) @
I
T
MIN
MAX
IT (mA)
Maximum
Reverse
Leakage
I
R
@ V
R
(A)
Maximum
Clamping
Voltage
V
C
@
I
PP
(Volts)
Maximum
Peak Pulse
Current
I
PP
(A)
1KSMBJ Series
1KSMBJ 6.8
N10A
5.50
6.12
7.46
10.0
1000.0 (4)
10.8
92.5
1KSMBJ 6.8A
N10B
5.80
6.45
7.14
10.0
1000.0 (4)
10.5
95.0
1KSMBJ 7.5
N10C
6.05
6.75
8.25
10.0
500.0 (4)
11.7
85.0
1KSMBJ 7.5A
N10D
6.40
7.13
7.88
10.0
500.0 (4)
11.3
88.3
1KSMBJ 8.2
N10E
6.63
7.38
9.02
10.0
200.0 (4)
12.5
80.0
1KSMBJ 8.2A
N10F
7.02
7.79
8.61
10.0
200.0 (4)
12.1
83.3
1KSMBJ 9.1
N10G
7.37
8.19
10.0
1.0
50.0 (4)
13.8
73.3
1KSMBJ 9.1A
N10H
7.78
8.65
9.55
1.0
50.0 (4)
13.4
75.0
1KSMBJ 10
N10I
8.10
9.00
11.0
1.0
10.0 (4)
15.0
66.7
1KSMBJ 10A
N10J
8.55
9.50
10.5
1.0
10.0 (4)
14.5
68.3
1KSMBJ 11
N10K
8.92
9.90
12.1
1.0
5.0 (4)
16.2
61.7
1KSMBJ 11A
N10L
9.40
10.5
11.6
1.0
5.0 (4)
15.6
63.3
1KSMBJ 12
N10M
9.72
10.80
13.2
1.0
5.0 (4)
17.3
58.3
1KSMBJ 12A
N10N
10.2
11.4
12.6
1.0
5.0
16.7
60.0
1KSMBJ 13
N10O
10.5
11.7
14.3
1.0
5.0
19.0
53.3
1KSMBJ 13A
N10P
11.1
12.4
13.7
1.0
5.0
18.2
55.0
1KSMBJ 15
N10Q
12.1
13.5
16.5
1.0
5.0
22.0
45.0
1KSMBJ 15A
N10R
12.8
14.3
15.8
1.0
5.0
21.2
46.7
1KSMBJ 16
N10S
12.9
14.4
17.6
1.0
5.0
23.5
43.3
1KSMBJ 16A
N10T
13.6
15.2
16.8
1.0
5.0
22.5
45.0
1KSMBJ 18
N10U
14.5
16.2
19.8
1.0
5.0
26.5
38.0
1KSMBJ 18A
N10V
15.3
17.1
18.9
1.0
5.0
25.2
40.0
1KSMBJ 20
N10W
16.2
18.0
22.0
1.0
5.0
29.1
35.0
1KSMBJ 20A
N10X
17.1
19.0
21.0
1.0
5.0
27.7
36.7
1KSMBJ 22
N10Y
17.8
19.8
24.2
1.0
5.0
31.9
31.7
1KSMBJ 22A
N10Z
18.8
20.9
23.1
1.0
5.0
30.6
33.3
1KSMBJ 24
O10A
19.4
21.6
26.4
1.0
5.0
34.7
28.3
1KSMBJ 24A
O10B
20.5
22.8
25.2
1.0
5.0
33.2
30.0
1KSMBJ 27
O10C
21.8
24.3
29.7
1.0
5.0
39.1
25.5
1KSMBJ 27A
O10D
23.1
25.7
28.4
1.0
5.0
37.5
26.7
1KSMBJ 30
O10E
24.3
27.0
33.0
1.0
5.0
43.5
22.9
1KSMBJ 30A
O10F
25.6
28.5
31.5
1.0
5.0
41.4
24.0
1KSMBJ 33
O10G
26.8
29.7
36.3
1.0
5.0
47.7
21.0
1KSMBJ 33A
O10H
28.2
31.4
34.7
1.0
5.0
45.7
22.0
1KSMBJ 36
O10I
29.1
32.4
39.6
1.0
5.0
52.0
19.2
1KSMBJ 36A
O10J
30.8
34.2
37.8
1.0
5.0
49.9
20.0
ELECTRICAL SPECIFICATION @ Tamb 25C
Notes:
1.
All testing is performed at Tamb = 25C (+/- 3C)
2.
Bv is measured using a pulse of 20 milliseconds or less
3.
Ir is doubled for Bi-directional devices only with VR equal or less than 10 volts
4.
Peak Pulse Current is quoted @ 10/1000
sec
5.
All parameters are stated as tested on a FET Tester Model 3400
6.
Devices are uni-directional. Vf is not specified.
1000W Surface Mount Transient Voltage Suppressor
Device
Code
RoHS
Silicon Avalanche Diodes
272
w w w . l i t t e l f u s e . c o m
Reverse
Stand Off
Voltage
V
R
(Volts)
Part
Number
Breakdown
Voltage
V
BR
(Volts) @
I
T
MIN
MAX
Maximum
Reverse
Leakage
I
R
@ V
R
(A)
Maximum
Clamping
Voltage
V
C
@
I
PP
(Volts)
Maximum
Peak Pulse
Current
I
PP
(A)
1KSMBJ 39
O10K
31.6
35.1
42.9
1.0
5.0
56.4
17.5
1KSMBJ 39A
O10L
33.3
37.1
41.0
1.0
5.0
53.9
18.7
1KSMBJ 43
O10M
34.8
38.7
47.3
1.0
5.0
61.9
16.0
1KSMBJ 43A
O10N
36.8
40.9
45.2
1.0
5.0
59.3
16.8
1KSMBJ 47
O10O
38.1
42.3
51.7
1.0
5.0
67.8
14.8
1KSMBJ 47A
O10P
40.2
44.7
49.4
1.0
5.0
64.8
15.5
1KSMBJ 51
O10Q
41.3
45.9
56.1
1.0
5.0
73.5
13.7
1KSMBJ 51A
O10R
43.6
48.5
53.6
1.0
5.0
70.1
14.3
1KSMBJ 56
O10S
45.4
50.4
61.6
1.0
5.0
80.5
12.3
1KSMBJ 56A
O10T
47.8
53.2
58.8
1.0
5.0
77.0
13.0
1KSMBJ 62
O10U
50.2
55.8
68.2
1.0
5.0
89.0
11.3
1KSMBJ 62A
O10V
53.0
58.9
65.1
1.0
5.0
85.0
11.8
1KSMBJ 68
O10W
55.1
61.2
74.8
1.0
5.0
98.0
10.2
1KSMBJ 68A
O10X
58.1
64.6
71.4
1.0
5.0
92.0
10.8
1KSMBJ 75
O10Y
60.7
67.5
82.5
1.0
5.0
108.0
9.2
1KSMBJ 75A
O10Z
64.1
71.3
78.8
1.0
5.0
103.0
9.7
1KSMBJ 82
P10A
66.4
73.8
90.2
1.0
5.0
118.0
8.5
1KSMBJ 82A
P10B
70.1
77.9
86.1
1.0
5.0
113.0
8.8
1KSMBJ 91
P10C
73.7
81.9
100.0
1.0
5.0
131.0
7.5
1KSMBJ 91A
P10D
77.8
86.5
95.5
1.0
5.0
125.0
8.0
1KSMBJ 100
P10E
81.0
90.0
110.0
1.0
5.0
144.0
7.0
1KSMBJ 100A
P10F
85.5
95.0
105.0
1.0
5.0
137.0
7.3
1KSMBJ 110
P10G
89.2
99.0
121.0
1.0
5.0
158.0
6.3
1KSMBJ 110A
P10H
94.0
105.0
116.0
1.0
5.0
152.0
6.6
1KSMBJ 120
P10I
97.2
108.0
132.0
1.0
5.0
173.0
5.8
1KSMBJ 120A
P10J
102.0
114.0
126.0
1.0
5.0
165.0
6.1
1KSMBJ 130
P10K
105.0
117.0
143.0
1.0
5.0
187.0
5.3
1KSMBJ 130A
P10L
111.0
124.0
137.0
1.0
5.0
179.0
5.6
1KSMBJ 150
P10M
121.0
135.0
165.0
1.0
5.0
215.0
4.7
1KSMBJ 150A
P10N
128.0
143.0
158.0
1.0
5.0
207.0
4.8
1KSMBJ 160
P10O
130.0
144.0
176.0
1.0
5.0
230.0
4.3
1KSMBJ 160A
P10P
136.0
152.0
168.0
1.0
5.0
219.0
4.6
1KSMBJ Series
ELECTRICAL SPECIFICATION @ Tamb 25C
Notes:
1. All testing is performed at Tamb = 25C (+/- 3C)
2. Bv is measured using a pulse of 20 milliseconds or less
3. Ir is doubled for Bi-directional devices only with VR equal or less than 10 volts
4. Peak Pulse Current is quoted @ 10/1000
sec
5. All parameters are stated as tested on a FET Tester Model 3400
6. Vf, for uni-directional devices, is measured using a 300 microsecond square wave pulse @ IT = 50A
1000W Surface Mount Transient Voltage Suppressor
Device
Code
IT (mA)
RoHS
Silicon Avalanche Diodes
273
w w w . l i t t e l f u s e . c o m
6
SILICON DIODE
ARRA
YS
1KSMBJ Series
1000W Surface Mount Transient Voltage Suppressor
2.16
2.74
2.16
2.26
Solder Pads
All dimensions in mm
RoHS